Datasheet

DS2781
4 of 31
EEPROM RELIABILITY SPECIFICATION
(V
DD
= 2.5V to 10V, T
A
= -20°C to +70°C, unless otherwise noted. Typical values are at T
A
= +25°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
EEPROM Copy Time t
EEC
15 ms
EEPROM Copy Endurance N
EEC
T
A
= +50°C 50,000 cycles
Note 1: All voltages are referenced to V
SS
.
Note 2: Factory calibrated accuracy. Higher accuracy can be achieved by in-system calibration by the user.
Note 3: Accumulation Bias register set to 00h. Current Offset Bias register set to 00h. NBEN bit = 0.
Note 4: Parameters guaranteed by design.
Note 5: Internal voltage regulator active.
PIN DESCRIPTION
PIN
TSSOP TDFN-EP
NAME FUNCTION
1 1 VB Internal Supply. Bypass to V
SS
with a 0.1µF capacitor.
2 2, 3 V
SS
Device Ground. Connect directly to the negative terminal of the cell stack.
Connect the sense resistor between V
SS
and SNS.
3 4 V
IN
Voltage Sense Input. The voltage of the battery pack is monitored through
this input pin with respect to the V
SS
pin.
4 5 V
DD
Power-Supply Input. Connect to the positive terminal of the battery pack
through a decoupling network.
5 6 DQ
Data Input/Output. 1-Wire data line. Open-drain output driver. Connect this
pin to the DATA terminal of the battery pack. This pin has a weak internal
pulldown (I
PD
) for sensing pack disconnection from host or charger.
6 7 OVD
1-Wire Bus Speed Control.
Input logic level selects the speed of the 1-Wire
bus. Logic 1 selects overdrive (OVD) and logic 0 selects standard timing
(STD). On a multidrop bus, all devices must operate at the same speed.
— 8 N.C.
No Connection
7 9 SNS
Sense Resistor Connection. Connect to the negative terminal of the battery
pack. Connect the sense resistor between V
SS
and SNS.
8 10 PIO
Programmable I/O Pin. Can be configured as input or output to monitor or
control user-defined external circuitry. Output driver is open drain. This pin
has a weak internal pulldown (I
PD
).
— EP EP Exposed Pad. Connect to V
SS
or leave floating.