Datasheet

MAX1020/MAX1022/MAX1057/MAX1058
10-Bit, Multichannel ADCs/DACs with FIFO,
Temperature Sensing, and GPIO Ports
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
AVDD
= V
DVDD
= 2.7V to 3.6V (MAX1057), external reference V
REF
= 2.5V (MAX1057), V
AVDD
= V
DVDD
= 4.75V to 5.25V
(MAX1020/MAX1022/MAX1058), external reference V
REF
= 4.096V (MAX1020/MAX1022/MAX1058), f
CLK
= 3.6MHz (50% duty cycle),
T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
AVDD
= V
DVDD
= 3V (MAX1057), V
AVDD
= V
DVDD
= 5V
(MAX1020/MAX1022/MAX1058), T
A
= +25°C. Outputs are unloaded, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
AVDD to AGND ........................................................-0.3V to +6V
DGND to AGND.....................................................-0.3V to +0.3V
DVDD to AVDD......................................................-3.0V to +0.3V
Digital Inputs to DGND.............................................-0.3V to +6V
Digital Outputs to DGND ........................-0.3V to (V
DVDD
+ 0.3V)
Analog Inputs, Analog Outputs and REF_
to AGND .............................................-0.3V to (V
AVDD
+ 0.3V)
Maximum Current into Any Pin (except AGND, DGND, AVDD,
DVDD, and OUT_)...........................................................50mA
Maximum Current into OUT_.............................................100mA
Continuous Power Dissipation (multilayer board, T
A
= +70°C)
36-Pin TQFN (6mm x 6mm)
(derate 35.7mW/°C above +70°C)......................2857.1mW
48-Pin TQFN (7mm x 7mm)
(derate 40mW/°C above +70°C)............................3200mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-60°C to +150°C
Junction Temperature......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
ADC
DC ACCURACY (Note 1)
Resolution 10 Bits
Integral Nonlinearity INL ±0.5 ±1.0 LSB
Differential Nonlinearity DNL ±0.5 ±1.0 LSB
Offset Error ±0.25 ±2.0 LSB
Gain Error (Note 2) ±0.025 ±2.0 LSB
Gain Temperature Coefficient ±1.4 ppm/°C
Channel-to-Channel Offset ±0.1 LSB
D YN A M IC SPEC IF I C A T IO N S ( 1 0 k H z s in e - w a v e in p u t , V
IN
= 2 .5 V
P- P
( M A X1 0 5 7 ) , V
IN
= 4 .0 9 6 V
P- P
( M A X1 0 2 0 /M A X1 0 2 2 /M A X1 0 5 8 ) ,
2 2 5 k s p s , f
SC LK
= 3 .6 M H z)
Signal-to-Noise Plus Distortion SINAD 61 dB
Total Harmonic Distortion
(Up to the Fifth Harmonic)
THD -70 dBc
Spurious-Free Dynamic Range SFDR 66 dBc
Intermodulation Distortion IMD f
IN1
= 9.9kHz, f
IN2
= 10.2kHz 72 dBc
Full-Linear Bandwidth SINAD > 70dB 100 kHz
Full-Power Bandwidth -3dB point 1 MHz
CONVERSION RATE (Note 3)
External reference 0.8 µs
Power-Up Time t
PU
Internal reference (Note 4) 218
C onver si on
C l ock
C ycl es
Note: If the package power dissipation is not exceeded, one output at a time may be shorted to AVDD, DVDD, AGND, or DGND
indefinitely