Datasheet

PARAMETER
SYMBOL
CONDITIONS MIN TYP
MAX
UNITS
Maximum REFP/REFN/COM Sink
Current
I
SINK
2mA
REFIN Input Resistance >500 kΩ
REFIN Input Current -0.7 µA
UNBUFFERED EXTERNAL REFERENCE (REFIN = GND, V
REFP
, V
REFN
, and V
COM
are applied externally)
REFP Input Voltage V
REFP
- V
COM
0.256
V
REFN Input Voltage V
REFN
- V
COM
-0.256
V
COM Input Voltage
V
COM
V
DD
/ 2
V
Differential Reference Input
Voltage
V
REF
V
REFP
- V
REFN
0.512
V
REFP Input Resistance
R
REFP
Measured between REFP and COM 4 kΩ
REFN Input Resistance
R
REFN
Measured between REFN and COM 4 kΩ
DIGITAL INPUTS (CLK, PD0, PD1)
CLK
0.7 x
V
DD
Input High Threshold V
IH
PD0, PD1
0.7 x
OV
DD
V
CLK
0.3 x
V
DD
Input Low Threshold V
IL
PD0, PD1
0.3 x
OV
DD
V
Input Hysteresis
V
HYST
0.1 V
CLK at GND or V
DD
±5
Digital Input Leakage Current DI
IN
PD0 and PD1 at OGND or OV
DD
±5
µA
Digital Input Capacitance
DC
IN
5pF
DIGITAL OUTPUTS (D7–D0, A/B)
Output Voltage Low V
OL
I
SINK
= 200µA
0.2 x
OV
DD
V
Output Voltage High V
OH
I
SOURCE
= 200µA
0.8 x
OV
DD
V
Tri-State Leakage Current
I
LEAK
±5 µA
Tri-State Output Capacitance
C
OUT
5pF
MAX1192
Ultra-Low-Power, 22Msps, Dual 8-Bit ADC
4 _______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= 3.0V, OV
DD
= 1.8V, V
REFIN
= V
DD
(internal reference), C
L
≈ 10pF at digital outputs, f
CLK
= 22MHz, C
REFP
= C
REFN
= C
COM
=
0.33µF, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)