Datasheet

dBc
MAX2601/MAX2602
3.6V, 1W RF Power Transistors
for 900MHz Applications
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(T
A
= T
MIN
to T
MAX
, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Collector-Emitter Voltage, Shorted Base (V
CES
) ....................17V
Emitter Base Reverse Voltage (V
EBO
)...................................2.3V
BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V
Average Collector Current (I
C
)........................................1200mA
Continuous Power Dissipation (T
A
= +70°C)
SOIC (derate 80mW/°C above +70°C) (Note 1) .............6.4W
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +165°C
Junction Temperature......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
I
C
< 100µA
V5.0LV
CEO
Collector-Emitter Sustaining
Voltage
V
15BV
CES
15BV
CEO
Collector-Emitter Breakdown
Voltage
100h
FE
DC Current Gain
µA0.05 1.5I
CES
Collector Cutoff Current
pF9.6C
OB
Output Capacitance
UNITSMIN TYP MAXSYMBOLPARAMETER
Note 1: Backside slug must be properly soldered to ground plane (see Slug Layout Techniques section).
I
C
= 200mA
Shorted base
Open base
I
C
= 250mA, V
CE
= 3V
V
CE
= 6V, V
BE
= 0V
V
CB
= 3V, I
E
= 0mA, f = 1MHz
CONDITIONS
dB3.3NFNoise Figure
dBc
-25IM5
Two-Tone IMR
-16IM3
8:1V
SWR
Stability under Continuous
Load Mismatch Conditions
%58
η
Collector Efficiency
dB11.6Power Gain
-42
2fo, 3foHarmonics
-43
mA4.2I
B
Base Current
GHzDC 1fFrequency Range
UNITSMIN TYP MAXSYMBOLPARAMETER
V
BB
= 0.9V
P
OUT
= +30dBm total power, f1 = 835MHz,
f2 = 836MHz
V
CC
= 3.6V, P
OUT
= 30dBm
V
CC
= 5.5V, all angles (Note 3)
(Note 2)
No modulation
P
OUT
= 30dBm
CONDITIONS
AC ELECTRICAL CHARACTERISTICS
(Test Circuit of Figure 1, V
CC
= 3.6V, V
BB
= 0.750V, Z
LOAD
= Z
SOURCE
= 50Ω, P
OUT
= 30dBm, f = 836MHz, T
A
= +25°C, unless oth-
erwise noted.)
Note 2: Guaranteed by design.
Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc; b) no parametric
degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation
capability is observed.
V15BV
CBO
Collector-Base Breakdown
Voltage
I
C
< 100µA, emitter open
V
CC
= 3.0V, P
OUT
= 29dBm
dBc