Datasheet

The high-impedance state of the I/O lines during tri-
state output mode facilitates use in multidrop networks.
In tri-state output mode, do not exceed (V
L
+ 0.3V) on
I/O V
L
_ or (V
CC
+ 0.3V) on I/O V
CC
_.
Thermal-Shutdown Protection
The MAX3394E/MAX3395E/MAX3396E are protected
from thermal damage resulting from short-circuit faults.
In the event of a short-circuit fault, when the junction
temperature (T
J
) reaches +125°C, a thermal sensor
forces the device into the tri-state output mode. When
T
J
drops below +115°C, normal operation resumes.
±15kV ESD Protection
As with all Maxim devices, ESD-protection structures are
incorporated on all pins to protect against ESD encoun-
tered during handling and assembly. The I/O V
CC
_ lines
are further protected by advanced ESD structures to
guard these pins from damage caused by ESD of up to
±15kV. Protection structures prevent damage caused by
ESD events in normal operation, tri-state output mode,
and when the device is unpowered. After arresting an
ESD event, MAX3394E/MAX3395E/MAX3396E continue
to function without latching up, whereas competing
devices can enter a latched-up state and must be power
cycled to restore functionality.
Several ESD testing standards exist for gauging the
robustness of ESD structures. The ESD protection of
the MAX3394E/MAX3395E/MAX3396E is characterized
for the human body model (HBM). Figure 6a shows the
model used to simulate an ESD event resulting from
contact with the human body. The model consists of a
100pF storage capacitor that is charged to a high volt-
age then discharged through a 1.5kΩ resistor. Figure
6b shows the current waveform when the storage
capacitor is discharged into a low impedance.
To ensure full ±15kV ESD protection, bypass V
CC
to
ground with a 0.1µF ceramic capacitor and an additional
1µF ceramic capacitor as close to the device as possible.
ESD Test Conditions
ESD performance depends on a variety of conditions.
Contact Maxim for a reliability report documenting test
setup, methodology, and results.
Applications Information
Power-Supply Decoupling
Bypass V
L
and V
CC
to ground with 0.1µF ceramic
capacitors. To ensure full ±15kV ESD protection,
bypass V
CC
to ground with an additional 1µF or greater
ceramic capacitor. Place all capacitors as close to the
device as possible.
Open-Drain Mode vs. Push-Pull Mode
The MAX3394E/MAX3395E/MAX3396E are compatible
with push-pull (active) and open-drain drivers. For push-
pull operation, maximum data rate is guaranteed to
6Mbps. For open-drain applications, the MAX3394E/
MAX3395E/MAX3396E include internal pullup resistors
and slew-rate enhancement circuitry, providing a maxi-
mum data rate of 1Mbps. External pullup resistors can
be added to increase data rate when the bus is loaded
by high capacitance. (See the Use of External Pullup
Resistors section.)
Serial-Interface Level Translation
The MAX3395E provides level translation on four I/O
lines, making it an ideal device for multivoltage I
2
C,
MICROWIRE, and SPI serial interfaces.
Use of External Pullup Resistors
The MAX3394E/MAX3395E/MAX3396E include internal
10kΩ pullup resistors. During a low-to-high logic transi-
tion, the internal pullup resistors charge the bus capac-
MAX3394E/MAX3395E/MAX3396E
±15kV ESD-Protected, High-Drive Current, Dual-/Quad-/
Octal-Level Translators with Speed-Up Circuitry
______________________________________________________________________________________ 11
CHARGE-CURRENT-
LIMIT RESISTOR
DISCHARGE
RESISTANCE
STORAGE
CAPACITOR
C
s
100pF
R
C
1MΩ
R
D
1500Ω
HIGH-
VOLTAGE
DC
SOURCE
DEVICE-
UNDER-
TEST
Figure 6a. Human Body ESD Test Model
I
P
100%
90%
36.8%
t
RL
TIME
t
DL
CURRENT WAVEFORM
PEAK-TO-PEAK RINGING
(NOT DRAWN TO SCALE)
I
r
10%
0
0
AMPERES
Figure 6b. HBM Discharge Current Waveform