Datasheet

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General Description

The MAX5062/MAX5063/MAX5064 high-frequency,

125V half-bridge, n-channel MOSFET drivers drive high-

and low-side MOSFETs in high-voltage applications.

These drivers are independently controlled and their

35ns typical propagation delay, from input to output, are

matched to within 3ns (typ). The high-voltage operation

with very low and matched propagation delay between

drivers, and high source/sink current capabilities in a

thermally enhanced package make these devices suit-

able for the high-power, high-frequency telecom power

converters. The 125V maximum input voltage range pro-

vides plenty of margin over the 100V input transient

requirement of telecom standards. A reliable on-chip

bootstrap diode connected between V

and BST elimi-

nates the need for an external discrete diode.

The MAX5062A/C and the MAX5063A/C offer both nonin-

verting drivers (see the Selector Guide). The

MAX5062B/D and the MAX5063B/D offer a noninverting

high-side driver and an inverting low-side driver. The

MAX5064A/B offer two inputs per driver that can be

either inverting or noninverting. The MAX5062A/B/C/D

and the MAX5064A feature CMOS (V

/ 2) logic inputs.

The MAX5063A/B/C/D and the MAX5064B feature TTL

logic inputs. The MAX5064A/B include a break-before-

make adjustment input that sets the dead time between

drivers from 16ns to 95ns. The drivers are available in the

industry-standard 8-pin SO footprint and pin configura-

tion, and a thermally enhanced 8-pin SO and 12-pin

(4mm x 4mm) thin QFN packages. All devices operate

over the -40°C to +125°C automotive temperature range.

Applications

Telecom Half-Bridge Power Supplies

Two-Switch Forward Converters

Full-Bridge Converters

Active-Clamp Forward Converters

Power-Supply Modules

Motor Control

Features

♦ HIP2100/HIP2101 Pin Compatible (MAX5062A/

MAX5063A)

♦ Up to 125V Input Operation

♦ 8V to 12.6V V

Input Voltage Range

♦ 2A Peak Source and Sink Current Drive Capability

♦ 35ns Typical Propagation Delay

♦ Guaranteed 8ns Propagation Delay Matching

Between Drivers

♦ Programmable Break-Before-Make Timing

(MAX5064)

♦ Up to 1MHz Combined Switching Frequency while

Driving 100nC Gate Charge (MAX5064)

♦ Available in CMOS (V

/ 2) or TTL Logic-Level

Inputs with Hysteresis

♦ Up to 15V Logic Inputs Independent of Input

Voltage

♦ Low 2.5pF Input Capacitance

♦ Instant Turn-Off of Drivers During Fault or PWM

Start-Stop Synchronization (MAX5064)

♦ Low 200µA Supply Current

♦ Versions Available With Combination of

Noninverting and Inverting Drivers (MAX5062B/D

and MAX5063B/D)

♦ Available in 8-Pin SO, Thermally Enhanced SO,

and 12-Pin Thin QFN Packages

MAX5062/MAX5063/MAX5064

125V/2A, High-Speed,

Half-Bridge MOSFET Drivers

________________________________________________________________ Maxim Integrated Products 1

PART

TEMP RANGE

PIN-

PACKAGE

TOP

MARK

PKG

CODE

MAX5062AASA

-40°C to +125°C

8 SO — S8-5

MAX5062BASA

-40°C to +125°C

8 SO — S8-5

MAX5062CASA

-40°C to +125°C 8 SO-EP*

—

S8E-14

MAX5062DASA

-40°C to +125°C 8 SO-EP*

—

S8E-14

Ordering Information

PART HIGH-SIDE DRIVER LOW-SIDE DRIVER LOGIC LEVELS PIN COMPATIBLE

MAX5062AASA Noninverting Noninverting CMOS (V

/ 2) HIP 2100IB

MAX5062BASA Noninverting Inverting CMOS (V

/ 2) —

MAX5062CASA Noninverting Noninverting CMOS (V

/ 2) —

MAX5062DASA Noninverting Inverting CMOS (V

/ 2) —

Selector Guide

19-3502; Rev 5; 5/07

For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at

1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.

Selector Guide continued at end of data sheet.

*EP = Exposed paddle.

Devices are available in both leaded and lead-free packaging.

Specify lead-free by replacing “-T” with “+T” when ordering.

Ordering Information continued at end of data sheet.

Summary of content (20 pages)

PAGE 1
9-3502; Rev 5; 5/07 125V/2A, High-Speed, Half-Bridge MOSFET Drivers Features The MAX5062/MAX5063/MAX5064 high-frequency, 125V half-bridge, n-channel MOSFET drivers drive highand low-side MOSFETs in high-voltage applications. These drivers are independently controlled and their 35ns typical propagation delay, from input to output, are matched to within 3ns (typ).
PAGE 2
MAX5062/MAX5063/MAX5064 125V/2A, High-Speed, Half-Bridge MOSFET Drivers ABSOLUTE MAXIMUM RATINGS (All voltages referenced to GND, unless otherwise noted.) VDD, IN_H, IN_L, IN_L+, IN_L-, IN_H+, IN_H-........-0.3V to +15V DL, BBM .....................................................-0.3V to (VDD + 0.3V) HS............................................................................-5V to +130V DH to HS.....................................................-0.3V to (VDD + 0.3V) BST to HS ........................
PAGE 3
125V/2A, High-Speed, Half-Bridge MOSFET Drivers (VDD = VBST = +8V to +12.6V, VHS = GND = 0V, BBM = open, TA = -40°C to +125°C, unless otherwise noted. Typical values are at VDD = VBST = +12V and TA = +25°C.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS -1 0.
PAGE 4
MAX5062/MAX5063/MAX5064 125V/2A, High-Speed, Half-Bridge MOSFET Drivers ELECTRICAL CHARACTERISTICS (continued) (VDD = VBST = +8V to +12.6V, VHS = GND = 0V, BBM = open, TA = -40°C to +125°C, unless otherwise noted. Typical values are at VDD = VBST = +12V and TA = +25°C.
PAGE 5
125V/2A, High-Speed, Half-Bridge MOSFET Drivers UNDERVOLTAGE LOCKOUT (VDD AND VBST RISING) vs. TEMPERATURE 7.3 7.0 UVLOBST 6.8 0.8 0.7 MAX5064 IN_L-, IN_H- = VDD IN_L+, IN_H+ = GND 2V/div VDD UVLOVDD HYSTERESIS 0.6 0.5 UVLOBST HYSTERESIS 0.4 0V 0.3 6.7 0.2 500µA/div 6.6 0.1 0A IDD 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 35 50 65 80 95 110 125 TEMPERATURE (°C) TEMPERATURE (°C) INTERNAL BST DIODE (I-V) CHARACTERISTICS 200 MAX5062/3/4 toc04 3.0 2.8 2.6 2.4 2.2 2.
PAGE 6
Typical Operating Characteristics (continued) (Typical values are at VDD = VBST = +12V and TA = +25°C, unless otherwise specified.) IDDO + IBSTO (mA) 8 7 6 5 4 3 2 1 0 0.34 0.32 0.30 0.28 0.26 0.24 0.22 0.20 0.18 0.16 0.14 0.12 0.10 MAX5062/3/4 toc09 CL = 0 SINKING 100mA -40 -25 -10 5 20 35 50 65 80 95 110 125 0 100 200 300 400 500 600 700 800 900 1000 FREQUENCY (kHz) TEMPERATURE (°C) PEAK DH AND DL SOURCE/SINK CURRENT DH OR DL RISE TIME vs.
PAGE 7
125V/2A, High-Speed, Half-Bridge MOSFET Drivers DH OR DL FALL PROPAGATION DELAY vs. TEMPERATURE PROPAGATION DELAY (ns) DH 45 MAX5064 225 200 175 tBBM (ns) 40 35 30 DL 25 150 125 100 20 75 15 50 10 25 5 0 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 50 90 130 170 210 250 290 RBBM (kΩ) BREAK-BEFORE-MAKE DEAD TIME vs.
PAGE 8
125V/2A, High-Speed, Half-Bridge MOSFET Drivers MAX5062/MAX5063/MAX5064 MAX5062/MAX5063 Pin Description PIN NAME 1 VDD Power Input. Bypass to GND with a parallel combination of 0.1µF and 1µF ceramic capacitor. FUNCTION 2 BST Boost Flying Capacitor Connection. Connect a 0.1µF ceramic capacitor between BST and HS for the high-side MOSFET driver supply. 3 DH High-Side-Gate Driver Output. Driver output for the high-side MOSFET gate. 4 HS Source Connection for High-Side MOSFET.
PAGE 9
125V/2A, High-Speed, Half-Bridge MOSFET Drivers MAX5062/MAX5063/MAX5064 IN_L+ VIH VIL 90% DL 10% tD_OFF1 tD_ON1 tF IN_L- tR VIH VIL tD_OFF2 tD_ON2 VIH IN_H+ VIL 90% DH 10% tD_OFF3 tD_ON3 tF IN_H- tR VIH VIL tD_OFF4 tD_ON4 tMATCH1 = (tD_ON2 - tD_ON1) or (tD_OFF2 - tD_OFF1) tMATCH2 = (tD_ON3 - tD_ON1) or (tD_ON4 - tD_ON2) or (tD_OFF3 - tD_OFF1) or (tD_OFF4 - tD_OFF2) Figure 1.
PAGE 10
MAX5062/MAX5063/MAX5064 125V/2A, High-Speed, Half-Bridge MOSFET Drivers Undervoltage Lockout Internal Bootstrap Diode Both the high- and low-side drivers feature undervoltage lockout (UVLO). The low-side driver’s UVLOLOW threshold is referenced to GND and pulls both driver outputs low when VDD falls below 6.8V. The high-side driver has its own undervoltage lockout threshold (UVLOHIGH), referenced to HS, and pulls DH low when BST falls below 6.4V with respect to HS.
PAGE 11
125V/2A, High-Speed, Half-Bridge MOSFET Drivers Driver Logic Inputs (IN_H, IN_L, IN_H+, IN_H-, IN_L+, IN_L-) The MAX5062_/MAX5064A are CMOS (VDD / 2) logicinput drivers while the MAX5063_/MAX5064B have TTLcompatible logic inputs. The logic-input signals are independent of VDD. For example, the IC can be powered by a 10V supply while the logic inputs are provided from a 12V CMOS logic. Also, the logic inputs are protected against voltage spikes up to 15V, regardless of the VDD voltage.
PAGE 12
MAX5062/MAX5063/MAX5064 125V/2A, High-Speed, Half-Bridge MOSFET Drivers VDD VIN A) C) PWMIN EXTERNAL BBM DELAY PWMIN INH DH N VOUT HS INL DL EXTERNAL BBM DELAY N tDMIN-DH-L DH MAX5062B/MAX5062D/MAX5063B/MAX5063D/MAX5064 VDD VIN B) PWMIN EXTERNAL BBM DELAY POTENTIAL OVERLAP TIME INH DH N HS INL DL VOUT DL N tDMIN-DL-H MAX5062A/MAX5062C/MAX5063A/MAX5063C/MAX5064 Figure 3.
PAGE 13
125V/2A, High-Speed, Half-Bridge MOSFET Drivers PDIODE = CDH × (VDD − 1) × fSW × Vf The total power dissipation when using the internal boost diode will be PD and, when using an external Schottky diode, will be PD - PDIODE. The total power dissipated in the device must be kept below the maximum of 1.951W for the 12-pin TQFN package, 1.5W for the 8-pin SO with exposed pad, and 0.471W for the regular 8-pin SO package at TA = +70°C ambient.
PAGE 14
MAX5062/MAX5063/MAX5064 125V/2A, High-Speed, Half-Bridge MOSFET Drivers Typical Application Circuits VIN = 0 TO 125V VDD = 8V TO 12.6V VDD BST N DH IN_H MAX5062A/ MAX5063A PWM CONTROLLER HS IN_L N DL VOUT GND PIN FOR PIN REPLACEMENT FOR THE HIP2100/HIP2101 Figure 4. MAX5062 Half-Bridge Conversion VDD = 8V TO 12.6V VIN = 0 TO 125V VDD CBST BST DH N MAX5064 IN_H+ PWM VOUT HS IN_LBBM CBBM RBBM DL AGND N PGND Figure 5.
PAGE 15
125V/2A, High-Speed, Half-Bridge MOSFET Drivers VDD = 8V TO 12.6V VIN = 0 TO 125V CBST VDD BST N DH MAX5064 HS IN_H+ PWM VOUT IN_L+ BBM N DL AGND PGND Figure 6. Two-Switch Forward Conversion VIN = 0 TO 125V VDD = 8V TO 12.6V VDD CBST BST DH PWM N MAX5064_ IN_H+ HS IN_LBBM CBBM RBBM AGND DL N VOUT PGND Figure 7.
PAGE 16
125V/2A, High-Speed, Half-Bridge MOSFET Drivers MAX5062/MAX5063/MAX5064 Functional Diagrams MAX5062A MAX5062C MAX5062B/ MAX5062D VDD/2 CMOS VDD/2 CMOS BST 2 5 IN_H DH IN_L 3 5 IN_H DH DL 8 6 IN_L 3 5 IN_H DH 6 IN_L DL 8 GND 7 GND 7 SO/SO-EP SO/SO-EP SO/SO-EP MAX5063B/ MAX5063D MAX5064A MAX5064B VDD/2 CMOS IN_H DH 7 3 6 HS 4 VDD 1 IN_L TTL BST 1 BST 2 5 9 DL 8 8 GND 7 4 BST 1 IN_H+ DH IN_H- 7 2 6 HS 3 VDD 12 BBM IN_L+ 5 9 DL 11 IN_L- 8 AGND SO/SO-EP 3 HS
PAGE 17
125V/2A, High-Speed, Half-Bridge MOSFET Drivers VIN = 125V VDD 8V TO 12.
PAGE 18
Package Information (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to www.maxim-ic.com/packages.) 8L, SOIC EXP. PAD.EPS MAX5062/MAX5063/MAX5064 125V/2A, High-Speed, Half-Bridge MOSFET Drivers PACKAGE OUTLINE 8L SOIC, .
PAGE 19
125V/2A, High-Speed, Half-Bridge MOSFET Drivers 24L QFN THIN.EPS ______________________________________________________________________________________ 19 MAX5062/MAX5063/MAX5064 Package Information (continued) (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to www.maxim-ic.com/packages.
PAGE 20
MAX5062/MAX5063/MAX5064 125V/2A, High-Speed, Half-Bridge MOSFET Drivers Package Information (continued) (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to www.maxim-ic.com/packages.) Revision History Pages changed at Rev 5: 1, 2, 4, 5, 11–15, 19, 20 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied.