Datasheet

MAX5884
3.3V, 14-Bit, 200Msps High Dynamic
Performance DAC with CMOS Inputs
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(AV
DD
= DV
DD
= VCLK = 3.3V, AGND = DGND = CLKGND = 0V, external reference, V
REFIO
= 1.25V, R
L
= 50Ω, I
OUT
= 20mA,
f
CLK
= 200Msps, T
A
= T
MIN
to T
MAX
, unless otherwise noted. ≥+25°C guaranteed by production test, <+25°C guaranteed by design
and characterization. Typical values are at T
A
= +25°C.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
AV
DD
, DV
DD
, VCLK to AGND................................-0.3V to +3.9V
AV
DD
, DV
DD
, VCLK to DGND ...............................-0.3V to +3.9V
AV
DD
, DV
DD
, VCLK to CLKGND ...........................-0.3V to +3.9V
AGND, CLKGND to DGND....................................-0.3V to +0.3V
DACREF, REFIO, FSADJ to AGND.............-0.3V to AV
DD
+ 0.3V
IOUTP, IOUTN to AGND................................-1V to AV
DD
+ 0.3V
CLKP, CLKN to CLKGND...........................-0.3V to VCLK + 0.3V
B0–B13, SEL0, PD, XOR to DGND.............-0.3V to DV
DD
+ 0.3V
Continuous Power Dissipation (T
A
= +70°C)
48-Pin QFN (derate 27mW/°C above +70°C)............2162.2mW
Thermal Resistance (
θ
JA
) ..............................................+37°C/W
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX
UNITS
STATIC PERFORMANCE
Resolution 14 Bits
Integral Nonlinearity INL Measured differentially
±0.8
LSB
Differential Nonlinearity DNL Measured differentially
±0.5
LSB
Offset Error OS
-0.025 ±0.003 +0.025
%FS
Offset Drift
±50
ppm/°C
Full-Scale Gain Error GE
FS
External reference, T
A
≥ +25°C
-3.5 +1.3
%FS
Internal reference
±100
Gain Drift
External reference
±50
ppm/°C
Full-Scale Output Current I
OUT
(Note 1) 2 20 mA
Min Output Voltage Single ended
-0.5
V
Max Output Voltage Single ended 1.1 V
Output Resistance R
OUT
1MΩ
Output Capacitance C
OUT
5pF
DYNAMIC PERFORMANCE
Output Update Rate f
CLK
1 200
Msps
f
CLK
= 100MHz
f
OUT
= 16MHz, -12dB FS
-153
Noise Spectral Density
f
CLK
= 200MHz
f
OUT
= 80MHz, -12dB FS
-148
dB FS/
Hz
f
OUT
= 1MHz, 0dB FS 87
f
OUT
= 1MHz, -6dB FS 82
Spurious-Free Dynamic Range to
Nyquist
SFDR
f
CLK
= 100MHz
f
OUT
= 1MHz, -12dB FS 80
dBc