Datasheet
MAX8702/MAX8703
Dual-Phase MOSFET Drivers
with Temperature Sensor
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 2. V
CC
= V
DD
= V
SHDN
= V
SKIP
= 5V, T
A
= 0°C to +85°C. Typical values are at T
A
= +25°C, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
V
CC
to AGND............................................................-0.3V to +6V
V
DD
to AGND............................................................-0.3V to +6V
PGND_ to AGND ...................................................-0.3V to +0.3V
SKIP, SHDN, DRHOT, TSET to AGND......................-0.3V to +6V
PWM_ to AGND ........................................................-0.3V to +6V
DL_ to PGND_ ............................................-0.3V to (V
DD
+ 0.3V)
LX_ to AGND .............................................................-2V to +30V
DH_ to LX_...............................................-0.3V to (V
BST_
+ 0.3V)
BST_ to LX_ ..............................................................-0.3V to +6V
Continuous Power Dissipation (T
A
= +70°C)
20-Pin 4mm x 4mm Thin QFN
(derate 16.9mW/
°C above +70°C).............................1349mW
Operating Temperature Range .........................-40°C to +100°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX
UNITS
Input Voltage Range V
CC
4.5 5.5 V
V
CC
rising 3.4
3.85
4.1
V
CC
Undervoltage-Lockout
Threshold
V
UVLO
85mV typical
hysteresis
V
CC
falling 3.3
3.75
4.0
V
SKIP = AGND, PWM_ = AGND 200 400 µA
V
CC
Quiescent Current
(Note 1)
I
CC
SKIP = AGND, PWM_ = V
CC
23mA
V
DD
Quiescent Current I
DD
SKIP = AGND, PWM_ = AGND 1 5 µA
V
CC
Shutdown Current SHDN = SKIP = AGND 2 5 µA
V
DD
Shutdown Current SHDN = SKIP = AGND 1 5 µA
GATE DRIVERS AND DEAD-TIME CONTROL (Figure 1)
t
PWM-DL
PWM_ high to DL_ low 19
DL_ Propagation Delay
t
DH-DL
DH_ low to DL_ high 36
ns
t
DL-DH
DL_ low to DH_ high 25
DH_ Propagation Delay
t
PWM-DH
PWM_ low to DH_ low 23
ns
t
F
_
DL
DL_ falling, 3nF load 11
DL_ Transition Time
t
R
_
DL
DL_ rising, 3nF load 8
ns
t
F
_
DH
DH_ falling, 3nF load 14
DH_ Transition Time
t
R
_
DH
DH_ rising, 3nF load 16
ns
DH_ On-Resistance (Note 2) R
DH
V
BST
_ - V
LX
_ = 5V 1.0 4.5 Ω
R
DL
_
HIGH
High state (pullup) 1.0 4.5
DL_ On-Resistance (Note 2)
R
DL
_
LOW
Low state (pulldown)
0.35
2.0
Ω
DH_ Source/Sink Current I
DH
V
DH
_ = 2.5V, V
BST
_ - V
LX
_ = 5V 1.5 A
DL_ Source Current
I
DL
_
SOURCE
V
DL
_ = 2.5V 1.5 A
DL_ Sink Current I
DL
_
SINK
V
DL
_ = 5V 5 A
Zero-Crossing Threshold V
PGND
_ - V
LX
_, SKIP = AGND 2.5 mV
TEMPERATURE SENSOR
Temperature Threshold
Accuracy
T
A
= +85°C to +125°C, 10°C falling hysteresis
-5 +5 °C
DRHOT Output Low Voltage I
SINK
= 3mA 0.4 V
DRHOT Leakage Current High state, V
DRHOT
= 5.5V 1 µA