Datasheet

MAX8702/MAX8703
Dual-Phase MOSFET Drivers
with Temperature Sensor
_______________________________________________________________________________________ 3
Note 1: Static drivers instead of pulsed-level translators.
Note 2: Production testing limitations due to package handling require relaxed maximum on-resistance specifications for the
thin QFN package.
Note 3: Specifications from -40°C to +100°C are guaranteed by design, not production tested.
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Thermal-Shutdown Threshold
10°C hysteresis
+160
°C
LOGIC CONTROL SIGNALS
Logic Input High Voltage SHDN, SKIP, PWM1, PWM2 2.4 V
Logic Input Low Voltage SHDN, SKIP, PWM1, PWM2 0.8 V
Logic Input Current SHDN, SKIP, PWM1, PWM2 -1 +1 µA
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 2. V
CC
= V
DD
= V
SHDN
= V
SKIP
= 5V, T
A
= 0°C to +85°C. Typical values are at T
A
= +25°C, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX
UNITS
Input Voltage Range V
CC
4.5 5.5 V
V
CC
rising 3.4 4.1
V
CC
Undervoltage-Lockout
Threshold
V
UVLO
85mV typical
hysteresis
V
CC
falling 3.3 4.0
V
SKIP = AGND, PWM_ = PGND_ 450 µA
V
CC
Quiescent Current I
CC
SKIP = AGND, PWM_ = V
CC
3mA
V
DD
Quiescent Current I
DD
SKIP = AGND, PWM_ = PGND_,
T
A
= -40°C to +85°C
5µA
V
CC
Shutdown Current
SHDN = SKIP = AGND, T
A
= -40°C to +85°C
5µA
V
DD
Shutdown Current
SHDN = SKIP = AGND, T
A
= -40°C to +85°C
5µA
GATE DRIVERS AND DEAD-TIME CONTROL
DH_ On-Resistance (Note 2) R
DH
V
BST
_ - V
LX
_ = 5V 1.0 4.5 Ω
R
DL
_
HIGH
High state (pullup) 1.0 4.5
DL_ On-Resistance (Note 2)
R
DL
_
LOW
Low state (pulldown)
0.35
2.0
Ω
TEMPERATURE SENSOR
DRHOT Output Low Voltage I
SINK
= 3mA 0.4 V
LOGIC CONTROL SIGNALS
Logic Input High Voltage SHDN, SKIP, PWM1, PWM2 2.4 V
Logic Input Low Voltage SHDN, SKIP, PWM1, PWM2 0.8 V
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 2. V
CC
= V
DD
= V
SHDN
= V
SKIP
= 5V, T
A
= -40°C to +100°C, unless otherwise noted.) (Note 3)