Datasheet

MAX8819A/MAX8819B/MAX8819C
PMIC with Integrated Chargers and Smart
Power Selector in a 4mm x 4mm TQFN
2 _______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS
(DC, LX_ unconnected; V
EP
= V
GND
= 0V, V
BAT
= 4V, DLIM[1:2] = 00, EN123 = EN4 = low, V
FB1
= V
FB2
= V
FB3
= 1.1V, V
FB4
= 0.6V,
PV13 = PV2 = SYS, T
A
= -40°C to +85°C, capacitors as shown in Figure 1, R
CISET
= 3kΩ, unless otherwise noted.) (Note 3)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
DC POWER INPUT
DC Voltage Range V
DC
4.1 5.5 V
MAX8819A/MAX8819C 4.3 4.35 4.4
SYS Regulation Voltage V
SYS_REG
V
DC
= 5.75V
MAX8819B 5.1 5.3 5.5
V
DC Undervoltage Threshold V
UVLO_DC
V
DC
rising, 500mV typical hysteresis 3.95 4.00 4.05 V
DC Overvoltage Threshold V
OVLO_DC
V
DC
rising, 300mV typical hysteresis 5.811 5.9 6.000 V
DLIM[1:2] = 10 90 95 100
DLIM[1:2] = 01 450 475 500
DC Current Limit
(Note 4)
I
DCLIM
V
DC
= 5.75V, V
SYS
= 5V
for MAX8819B or V
SYS
=
4V for MAX8819A/
MAX8819C
DLIM[1:2] = 00 900 1000 1100
mA
DLIM[1:2] = 11 (suspend) 0.02 0.035
DLIM[1:2] ≠ 11, I
SYS
= 0mA, I
BAT
= 0mA,
EN123 = low, EN4 = low, CEN = high,
V
DC
= 5.5V
1.33
DC Quiescent Current I
DCIQ
DLIM[1:2] ≠ 11, I
SYS
= 0mA, EN123 = low,
EN4 = low, CEN = low, V
DC
= 5.5V
0.95
mA
DC-to-SYS Dropout Resistance R
DS
V
DC
= 4V, I
SYS
= 400mA, DLIM[1:2] = 01 0.330 0.700 Ω
DC-to-SYS Soft-Start Time t
SS-D-S
1.5 ms
DC Thermal-Limit Temperature
Die temperature where current limit is
reduced
100 °C
DC Thermal-Limit Gain
Amount of input current reduction above
thermal-limit temperature
5%/°C
SYSTEM
System Operating Voltage Range V
SYS
2.6 5.5 V
ABSOLUTE MAXIMUM RATINGS
DC, SYS, BAT, CISET, DLIM1, DLIM2, EN123
CEN, EN4, CHG, RST1, FB1, FB2, FB3 to GND....-0.3V to +6V
PV2 to GND...............................................-0.3V to (V
SYS
+ 0.3V)
PV13 to SYS...........................................................-0.3V to +0.3V
PG1, PG2, PG3, PG4 to GND................................-0.3V to +0.3V
COMP4, FB4 to GND ................................-0.3V to (V
SYS
+ 0.3V)
LX4 to PG4 .............................................................-0.3V to +33V
OVP4 to GND .........................................................-0.3V to +33V
LX1, LX2, LX3 Continuous Current (Note 1) .........................1.5A
LX4 Current ................................................................750mA
RMS
Output Short-Circuit Duration.....................................Continuous
Continuous Power Dissipation (T
A
= +70°C)
28-Pin Thin QFN Single-Layer Board (derate 20.8mW/°C
above +70°C)...........................................................1666.7mW
28-Pin Thin QFN Multilayer Board (derate 28.6mW/°C
above +70°C)...........................................................2285.7mW
Junction-to-Case Thermal Resistance (θ
JC
) (Note 2)
28-Lead Thin QFN...........................................................3°C/W
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature........................................-40°C to +125°C
Storage Temperature.........................................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1: LX1, LX2, LX3 have clamp diodes to their respective PG_ and PV_. Applications that forward bias these diodes must take
care not to exceed the package power dissipation limits.
Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to http://www.maxim-ic.com/thermal-tutorial
.