Datasheet

MAX9985
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
2
Maxim Integrated
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(Using the Typical Application Circuit , no input RF or LO signals applied, V
CC
= 4.75V to 5.25V, T
C
= -40°C to +85°C. Typical values
are at V
CC
= 5.0V, T
C
= +25°C, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
V
CC
to GND...........................................................-0.3V to +5.5V
LO1, LO2 to GND ...............................................................±0.3V
Any Other Pins to GND...............................-0.3V to (V
CC
+ 0.3V)
RFMAIN, RFDIV, and LO_ Input Power ..........................+20dBm
RFMAIN, RFDIV Current (RF is DC shorted to GND through
balun) ...............................................................................50mA
Continuous Power Dissipation (Note 1) .............................6.75W
Operating Case Temperature Range (Note 2)......-40°C to +100°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage V
CC
4.75 5 5.25 V
Total supply current (see Table 1 for lower
current settings)
400 440
V
CC
(pin 16) 80
V
CC
(pin 30) 80
IFM+/IFM- (total of both) 105
Supply Current I
CC
IFD+/IFD- (total of both) 105
mA
LOSEL Input High Voltage V
IH
2V
LOSEL Input Low Voltage V
IL
0.8 V
LOSEL Input Current I
IH
and I
IL
-10 +10 µA
Note 1: Based on junction temperature T
J
= T
C
+ (θ
JC
x V
CC
x I
CC
). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to PCB. See the Application Information section for details. The junction
temperature must not exceed +150°C.
Note 2: T
C
is the temperature on the exposed pad of the package. T
A
is the ambient temperature of the device and PCB.
Note 3: Junction temperature T
J
= T
A
+ (θ
JA
x V
CC
x I
CC
). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 4: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial
.
PACKAGE THERMAL CHARACTERISTICS
Junction-to-Ambient Thermal Resistance (θ
JA
)
(Notes 3, 4)...................................................................38°C/W
Junction-to-Board Thermal Resistance (θ
JB
)................12.2°C/W
Junction-to-Case Thermal Resistance (θ
JC
)
(Notes 1, 4)..................................................................7.4°C/W