Datasheet

6 Maxim Integrated
16-Bit Microcontrollers with
Infrared Module and Optional USB
MAXQ612/MAXQ622
RECOMMENDED OPERATING CONDITIONS (continued)
(V
DD
= V
RST
to 3.6V, T
A
= 0NC to +70NC.) (Note 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
System Clock Period t
CK
1/f
CK
ns
NANOPOWER RING
Nanopower Ring Frequency f
NANO
T
A
= +25NC
3 13 20
kHz
T
A
= +25NC, V
DD
= POR voltage
(Note 6)
1.7 2.4
Nanopower Ring Duty Cycle t
NANO
(Note 6) 40 60 %
Nanopower Ring Current I
NANO
Typical at V
DD
= 1.64V, T
A
=
+25°C (Note 6)
40 400 nA
WAKE-UP TIMER
Wake-Up Timer Interval t
WAKEUP
1/f
NANO
65,535/
f
NANO
s
FLASH MEMORY
System Clock During Flash
Programming/Erase
f
FPSYSCLK
1 MHz
Flash Erase Time
t
ME
Mass erase 20 40
ms
t
ERASE
Page erase 20 40
Flash Programming Time per
Word
t
PROG
(Note 14) 20 100
Fs
Write/Erase Cycles 20,000 Cycles
Data Retention
T
A
= +25NC
100 Years
USB
USB Supply Voltage V
BUS
(Note 15) 4.5 5.0 5.5 V
V
BUS
Supply Current (Note 16) I
VBUS
Transmitting on DP and DM at
12Mbps, C
L
= 50pF on DP and DM
to GND, FRCVDD = 0
13.5 mA
Transmitting on DP and DM at
12Mbps, C
L
= 50pF on DP and DM
to GND, FRCVDD = 1
3.5 mA
V
BUS
Supply Current During
Idle (Note 16)
I
VBUSID
DP = high, DM = low, FRCVDD = 0
(Note 6)
6 mA
DP = high, DM = low, FRCVDD = 1 0.2 mA
V
BUS
Suspend Supply Current I
VBUSSUS
500
FA
Single-Ended Input High
Voltage DP, DM
V
IHD
2.0 V
Single-Ended Input Low
Voltage DP, DM
V
ILD
0.8 V
Output Low Voltage DP, DM V
OLD
R
L
= 1.5kI from DP to 3.6V
0.3 V
Output High Voltage DP, DM V
OHD
R
L
= 15kI from DP and DM to GND
2.8 V
Differential Input Sensitivity
DP, DM
V
DI
DP to DM 0.2 V
Common-Mode Voltage Range V
CM
Includes V
DI
range 0.8 2.5 V