Datasheet

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General Description

The MXD1210 nonvolatile RAM controller is a very low-

power CMOS circuit that converts standard (volatile)

CMOS RAM into nonvolatile memory. It also continually

monitors the power supply to provide RAM write protec-

tion when power to the RAM is in a marginal (out-of-tol-

erance) condition. When the power supply begins to

fail, the RAM is write-protected, and the device switch-

es to battery-backup mode.

Applications

Microprocessor Systems

Computers

Embedded Systems

Features

♦ Battery Backup

♦ Memory Write Protection

♦ 230µA Operating Mode Quiescent Current

♦ 2nA Backup Mode Quiescent Current

♦ Battery Freshness Seal

♦ Optional Redundant Battery

♦ Low Forward-Voltage Drop on V

Supply Switch

♦ 5% or 10% Power-Fail Detection Options

♦ Tests Battery Condition During Power-Up

♦ 8-Pin SO Available

MXD1210

Nonvolatile RAM Controller

________________________________________________________________

Maxim Integrated Products

CCI

+5V

VBATT2

GND

CMOS

RAM

MXD1210

FROM

DECODER

VBATT1

CCO

PART TEMP RANGE PIN-PACKAGE

MXD1210C/D 0°C to +70°C Dice*

MXD1210CPA 0°C to +70°C 8 PDIP

MXD1210CSA 0°C to +70°C 8 SO

MXD1210CWE 0°C to +70°C 16 Wide SO

MXD1210EPA -40°C to +85°C 8 PDIP

MXD1210ESA -40°C to +85°C 8 SO

MXD1210EWE -40°C to +85°C 16 Wide SO

MXD1210MJA -55°C to +125°C 8 CERDIP

Typical Operating Circuit

Ordering Information

CEO

CEGND

CCI

VBATT2VBATT1

TOL

CCO

DIP/SO

TOP VIEW

MXD1210

N.C.

CCI

N.C.

VBATT2

N.C.

CEO

N.C.

MXD1210

WIDE SO

CCO

N.C.

TOL

VBATT1

N.C.

GND

Pin Configurations

19-0154; Rev 2; 11/05

For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at

1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.

Contact factory for dice specifications.

Devices in PDIP and SO packages are available in both lead-

ed and lead-free packaging. Specify lead free by adding the +

symbol at the end of the part number when ordering. Lead free

not available for CERDIP package.

Summary of content (9 pages)

PAGE 1
9-0154; Rev 2; 11/05 Nonvolatile RAM Controller The MXD1210 nonvolatile RAM controller is a very lowpower CMOS circuit that converts standard (volatile) CMOS RAM into nonvolatile memory. It also continually monitors the power supply to provide RAM write protection when power to the RAM is in a marginal (out-of-tolerance) condition. When the power supply begins to fail, the RAM is write-protected, and the device switches to battery-backup mode.
PAGE 2
MXD1210 Nonvolatile RAM Controller ABSOLUTE MAXIMUM RATINGS 8-Pin SO (derate 5.88mW/°C above +70°C).................471mW 8-Pin CERDIP (derate 8.00mW/°C above +70°C).........640mW 16-Pin Wide SO (derate 9.52mW/°C above +70°C) .....762mW Operating Temperature Range C Suffix.................................................................0°C to +70°C E Suffix ..............................................................-40°C to +85°C M Suffix ...........................................................
PAGE 3
Nonvolatile RAM Controller (VCCI < VBATT, positive edge rate at VBATT1, VBATT2 > 0.1V/µs, TA = TMIN to TMAX, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS MXD1210C/E Quiescent Current (Note 1) IBATT VCCO, CEO open, VCCI = 0V Output Supply Current ICCO2 VBATT - VCCO ≤ 0.2V (Notes 3, 4) CEO Output Voltage VO MIN TYP MAX 2 100 nA 5 µA 300 µA MXD1210M VBATT 0.2 Output open UNITS V CAPACITANCE (TA = TMIN to TMAX, unless otherwise noted.
PAGE 4
Nonvolatile RAM Controller MXD1210 Pin Description PIN NAME FUNCTION 8-PIN PDIP/SO 1 16-PIN WIDE SO 2 2 4 3 6 TOL Tolerance Select Pin 4 8 GND Ground 5 9 CE 6 11 CEO 7 13 VBATT2 8 15 VCCI 5V Power Supply to Chip — 1, 3, 5, 7, 10, 12, 14, 16 N.C. No Connection. Not internally connected.
PAGE 5
Nonvolatile RAM Controller Main Functions The MXD1210 executes five main functions to perform reliable RAM operation and battery backup (see the Typical Operating Circuit and Figure 1): 1) RAM Power-Supply Switch: The switch directs power to the RAM from the incoming supply or from the selected battery, whichever is at the greater voltage. The switch control uses the same criterion to direct power to MXD1210 internal circuitry.
PAGE 6
MXD1210 Nonvolatile RAM Controller tCE CE VIL VIH CE VIH tPF tPD VBATT - 0.2V VIH CEO VIH VBATT - 0.2V tCE VIL CEO tF tPD tREC VCCI 4.75V 4.75V 4.5V 4.25V 4.5V 4.25V 3V VCCI tR tFB Figure 2. Power-Up Timing Diagram 6 Figure 3.
PAGE 7
Nonvolatile RAM Controller MXD1210 Chip Topography VCCI VBATT2 VCCO VBATT1 0.121" (3.073mm) CEO TOL CE GND 0.080" (2.032mm) TRANSISTOR COUNT: 1436; LEAVE SUBSTRATE UNCONNECTED.
PAGE 8
Package Information (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to www.maxim-ic.com/packages.) DIM A A1 B C e E H L N E H INCHES MILLIMETERS MAX MIN 0.069 0.053 0.010 0.004 0.014 0.019 0.007 0.010 0.050 BSC 0.150 0.157 0.228 0.244 0.016 0.050 MAX MIN 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 1.27 BSC 3.80 4.00 5.80 6.20 0.40 SOICN .EPS MXD1210 Nonvolatile RAM Controller 1.
PAGE 9
Nonvolatile RAM Controller PDIPN.EPS Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 _____________________ 9 © 2005 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products, Inc.