Specifications

Micrel, Inc.
KSZ8895MQ/RQ/FMQ
Electrical Characteristics
(4, 5)
(Continued)
V
IN
= 1.2V/3.3V (typ.); T
A
= 25°C
Symbol Parameter Condition Min. Typ. Max. Units
CMOS Inputs
V
IH
Input High Voltage (VDDIO=3.3/2.5/1.8V)
2.0/1.8
/1.3
V
V
IL
Input Low Voltage (VDDIO=3.3/2.5/1.8V)
0.8/0.7
/0.5
V
I
IN
Input Current (Excluding Pull-up/Pull-down) V
IN
= GND ~ V
DDIO
–10 10 µA
CMOS Outputs
V
OH
Output High Voltage (VDDIO=3.3/2.5/1.8V) I
OH
= –8mA
2.4/2.0
/1.5
V
V
OL
Output Low Voltage (VDDIO=3.3/2.5/1.8V) I
OL
= 8mA
0.4/0.4
/0.3
V
I
OZ
Output Tri-State Leakage V
IN
= GND ~ V
DDIO
10 µA
100BASE-TX Transmit (measured differentially after 1:1 transformer)
V
O
Peak Differential Output Voltage
100Ω termination on the
differential output
0.95 1.05 V
V
IMB
Output Voltage Imbalance
100Ω termination on the
differential output
2 %
t
r
t
t
Rise/fall Time
3
5
ns
Rise/fall Time Imbalance 0 0.5 ns
Duty Cycle Distortion ±0.5 ns
Overshoot 5 %
Output Jitters Peak-to-peak 0 0.75 1.4 ns
10BASE-T Receive
V
SQ
Squelch Threshold 5MHz square wave 300 400 585 mV
10BASE-T Transmit (measured differentially after 1:1 transformer) V
DDAT
= 3.3V
V
P
Peak Differential Output Voltage
100Ω termination on the
differential output
2.2 2.5 2.8 V
Output Jitters Peak-to-peak 1.4 3.5 ns
Rise/fall Times
28
30
ns
March 12, 2014
105
Revision 1.7