Datasheet

Table Of Contents
MCP23016
DS20090C-page 20 © 2007 Microchip Technology Inc.
2.1 DC Characteristics
TABLE 2-1: DC CHARACTERISTICS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature: -40°C T
A +85°C for industrial
Param
No.
Characteristic Sym Min Typ† Max Units Conditions
D001 Supply Voltage V
DD 2.0 5.5 V
D002 Standby Current IDD 0.4 mA IARES = 1
D003 Standby Current I
PD 25 µA IARES = 0
Input Low Voltage
I/O ports VIL
D004 TTL buffer Vss 0.15 VDD V For entire VDD range
D004A Vss 0.8V 4.5V VDD 5.5V
D005 Schmitt Trigger buffer Vss 0.2 VDD V
Input High Voltage
I/O ports V
IH
D006 TTL buffer 2.0 VDD V4.5V VDD 5.5V
D006A 0.25 V
DD
+ 0.8V
—VDD V For entire VDD range
D007 Schmitt Trigger buffer 0.8 V
DD —VDD V For entire VDD range
Input Leakage Current
D008 I/O ports I
IL ——±1.0 µA Vss VPIN VDD,
Pin at hi-impedance
D009 CLK ±5.0 µA Vss V
PIN VDD
Output Low Voltage
D010 I/O Ports VOL ——0.6VIOL = 8.5 mA, VDD = 4.5V
Output High Voltage
D010 I/O Ports V
OH VDD-0.7 V IOH = 3.0 mA, VDD = 4.5V
D011 VDD start voltage to ensure
internal POR signal
VPOR —Vss— V
D012 V
DD rise rate to ensure
internal POR signal
SVDD 0.05 - V/ms Note 1
DC Trip Point V
TPOR 1.5 1.7 1.9 V DC Slow Ramp
D012 VDD rise rate to ensure
internal POR signal with
PWRT enabled
SVDD 0.05 V/ms Note 1
DC Current Draw IPOR 5.0 µA At 5.0V (1 µ/Volt typical)
Note 1: These parameters are characterized but not tested.
2: Data in "Typ" column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
3: Standby current is measured with all I/O in hi-impedance state and tied to V
DD and VSS.
4: For RC CLK, current through R
EXT is not included. The current through the resistor can be estimated by
the formula
Ir = VDD/2 REXT (mA) with REXT in kohm.
5: Negative current is defined as coming out of the pin.