Datasheet

ManualsBrandsMicrochip ManualsDiscrete SemiconductorsMOSFET, 300 V 0.74 W TO-92

Supertex inc.

www.supertex.com

DN2530

Doc.# DSFP-DN2530

A062713

Features

► High input impedance

► Low input capacitance

► Fast switching speeds

► Low on-resistance

► Free from secondary breakdown

► Low input and output leakage

Applications

► Normally-on switches

► Solid state relays

► Converters

► Linear ampliers

► Constant current sources

► Power supply circuits

► Telecom

General Description

The DN2530 is a low threshold depletion-mode (normally-

on) transistor utilizing an advanced vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors and

with the high input impedance and positive temperature

coefcient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway

and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Absolute Maximum Ratings

Parameter Value

Drain-to-source voltage BV

DSX

Drain-to-gate voltage BV

DGX

Gate-to-source voltage ±20V

Operating and storage temperature -55

C to +150

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

N-Channel Depletion-Mode

Vertical DMOS FETs

Pin Conguration

TO-243AA (SOT-89)

TO-92

TO-243AA (SOT-89)

TO-92

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

SiDN

2530

YYWW

DN5TW

W = Code for week sealed

= “Green” Packaging

Product Marking

Package may or may not include the following marks: Si or

GATE

SOURCE

DRAIN

GATE

SOURCE

DRAIN

Product Summary

DSX

/BV

DGX

DS(ON)

(max)

DSS

(min)

300V 12Ω 200mA

Typical Thermal Resistance

Package θ

3-Lead TO-92 132

C/W

3-Lead TO-243AA (SOT-89) 133

C/W

Ordering Information

Part Number Package Option Packing

DN2530N3-G 3-Lead TO-92 1000/Bag

DN2530N3-G P002

3-Lead TO-92 2000/Reel

DN2530N3-G P003

DN2530N3-G P005

DN2530N3-G P013

DN2530N3-G P014

DN2530N8-G

3-Lead TO-243AA (SOT-89)

2000/Reel

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

Summary of content (6 pages)

PAGE 1
Supertex inc. DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage The DN2530 is a low threshold depletion-mode (normallyon) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
PAGE 2
DN2530 Thermal Characteristics ID Power Dissipation (continuous)† ID (pulsed) @TA = 25OC TO-243AA 200mA 500mA TO-92 175mA 500mA Package IDR† IDRM 1.6W‡ 200mA 500mA 0.74W 175mA 500mA Notes: † ID (continuous) is limited by max rated Tj. ‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSX Drain-to-source breakdown voltage 300 - - V VGS = -5.
PAGE 3
DN2530 Typical Performance Curves Output Characteristics 1.0 Saturation Characteristics 0.25 0.8 -1.0V 0V 0.5V 0.2 ID (amperes) 0.5V 0.6 ID (amperes) -0.5V VGS = 1.0V VGS = 1.0V 0V 0.4 -0.5V 0.15 0.1 -1.5V -1.0V 0.2 0.05 -1.5V 0 0 50 100 150 200 0 250 0 1 2 4 5 Power Dissipation vs. Ambient Temperature Transconductance vs. Drain Current 0.5 3 VDS (volts) VDS (volts) 2.0 VDS = 10V TO-243AA 0.4 1.6 0.
PAGE 4
DN2530 Typical Performance Curves (cont.) BVDSS Variation with Temperature 1.10 On-Resistance vs. Drain Current 50 VGS = 0V VGS = -5V ID = 100mA 40 RDS(ON) (ohms) BVDSS (normalized) 1.05 1.00 0.95 0.90 20 10 0.85 -50 1.0 0 50 100 0 0 150 0.2 0.4 0.8 1.0 ID (amps) Transfer Characteristics VGS(OFF) and RDS(ON) Variation with Temperature 2.5 VDS = 10V TA = -55°C 2 0.6 VGS(th) (normalized) 25°C 125°C 0.4 0.2 RDS(ON) @ ID = 150mA 1.5 VGS(OFF) @ 10mA 1 0.
PAGE 5
DN2530 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L c b e1 e Side View Front View E E1 1 3 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014† .014† .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale.
PAGE 6
DN2530 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 C E H L 1 2 E1 3 b b1 e A e1 Top View Symbol Dimensions (mm) Side View A b b1 C D D1 E E1 e MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00† NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 1.50 BSC e1 3.00 BSC H L 3.94 0.73† - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale.