Datasheet

ManualsBrandsMicrochip ManualsDiscrete SemiconductorsMOSFET, 400 V 1 W TO-92

Supertex inc.

www.supertex.com

DN2540

Doc.# DSFP-DN2540

B060313

Features

► High input impedance

► Low input capacitance

► Fast switching speeds

► Low on-resistance

► Free from secondary breakdown

► Low input and output leakage

Applications

► Normally-on switches

► Solid state relays

► Converters

► Linear ampliers

► Constant current sources

► Power supply circuits

► Telecom

General Description

The Supertex DN2540 is a low threshold depletion mode

(normally-on) transistor utilizing an advanced vertical

DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces a device

with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefcient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

N-Channel Depletion-Mode

Vertical DMOS FETs

Absolute Maximum Ratings

Parameter Value

Drain-to-source voltage BV

DSX

Drain-to-gate voltage BV

DGX

Gate-to-source voltage ±20V

Operating and storage

temperature

-55

C to +150

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Pin Conguration

TO-243AA (SOT-89)

TO-220TO-92

GATE

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

SOURCE

DRAIN

Typical Thermal Resistance

Package θ

TO-92 132

C/W

TO-220

C/W

TO-243AA (SOT-89)

133

C/W

Ordering Information

Part Number Package Option Packing

DN2540N3-G TO-92 1000/Bag

DN2540N3-G P002

TO-92 2000/Reel

DN2540N3-G P003

DN2540N3-G P005

DN2540N3-G P013

DN2540N3-G P014

DN2540N5-G

TO-220

50/Tube

DN2540N8-G

TO-243AA (SOT-89)

2000/Reel

Product Summary

DSX

/BV

DGX

DS(ON)

(max)

DSS

(min)

400V 25Ω 150mA

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

Summary of content (8 pages)

PAGE 1
Supertex inc. DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage The Supertex DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
PAGE 2
DN2540 Product Marking Si D N 2 5 4 0 YYWW YY = Year Sealed WW = Week Sealed = “Green” Packaging DN2540N5 LLLLLLLLL YYWW Package may or may not include the following marks: Si or L = Lot Number YY = Year Sealed WW = Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-220 TO-92 DN5DW W = Code for week sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) Thermal Characteristics (continuous)† ID ID Power Di
PAGE 3
DN2540 Electrical Characteristics (cont.) Sym Parameter td(ON) tr td(OFF) tf VSD trr Min Typ Max Units Conditions Turn-on delay time - - 10 Rise time - - 15 ns VDD = 25V, ID = 150mA, RGEN = 25Ω, Turn-off delay time - - 15 Fall time - - 20 Diode forward voltage drop - - 1.8 V VGS = -10V, ISD = 120mA Reverse recovery time - 800 - ns VGS = -10V, ISD = 1.0A Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.
PAGE 4
DN2540 Typical Performance Curves Output Characteristics 0.5 Saturation Characteristics 250 VGS = 1.0V 0.5V 0V 0.3 0.2 -0.5V 0.1 0 VGS = 1.0V 0.5V 0V 200 ID (milliamps) ID (amperes) 0.4 80 160 240 320 -0.5V 100 50 -1.0V -1.0V 0 150 0 400 0 1 2 Transconductance vs. Drain Current 0.5 TA = 25OC 0.3 TA = 125OC 0.2 10 0.1 0 5 TO-220 TA = -55OC PD (watts) GFS (siemens) 0.4 4 Power Dissipation vs.
PAGE 5
DN2540 Typical Performance Curves (cont.) BVDSS Variation with Temperature 1.10 VGS = 0V VGS = -5.0V 80 RDS(ON) (Ohms) 1.05 BVDSS (normalized) On-Resistance vs. Drain Current 100 1.00 0.95 60 40 20 0.90 -50 0.40 0 50 100 320 400 VGS(OFF) and RDS(ON) Variation with Temperature VDS = 10V 2.5 TA = -55OC 2.0 Normalized 25OC 125OC RDS(ON) @ ID = 120mA 1.5 VGS(OFF) @ 10µA 1.0 0.5 0.
PAGE 6
DN2540 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L c b e1 e Side View Front View E1 E 1 3 2 Bottom View Symbol Dimensions (inches) A b c MIN .170 .014 NOM - - MAX .210 .022 † .014 † D E E1 e e1 L .175 .125 .080 .095 .045 .500 - - - - - - .205 .165 .105 .105 .055 .610* † .022 † JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale.
PAGE 7
DN2540 3-Lead TO-220 Package Outline (N5) E E2 A Seating Plane A1 A ΦP Q E H1 H1 4 D1 D Chamfer Optional D1 1 Thermal Pad 3 2 E1 L View B A2 c e A Side View Front View 1 View A - A 3 2 L1 b2 b View B Symbol Dimension (inches) MIN A A1 A2 b b2 c .140 .020 .080 .015 .045 .012 NOM - - - MAX .190 .055 .120 † † D D1 .560 .326 D2 † .027 .057 - - - .040 .070 .024 .650 .361 † .474 † E E1 E2 .380 .270 0.20* - - - - .507 .420 .
PAGE 8
DN2540 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 C E H L 1 2 E1 3 b b1 e A e1 Top View Symbol Dimensions (mm) Side View A b b1 C D D1 E E1 e MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00† NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 1.50 BSC e1 3.00 BSC H L 3.94 0.73† - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale.