Datasheet

MCP14E9/10/11
DS25005A-page 4 © 2011 Microchip Technology Inc.
Power Supply
Supply Voltage V
DD
4.5 — 18.0 V
Supply Current
I
DD
— 1000 1800 µA
V
IN_A
=3V, V
IN_B
=3V,
ENB_A = ENB_B = High
I
DD
— 600 900 µA
V
IN_A
=0V, V
IN_B
=0V,
ENB_A = ENB_B = High
I
DD
— 800 1600 µA
V
IN_A
=3V, V
IN_B
=0V,
ENB_A = ENB_B = High
I
DD
— 800 1600 µA
V
IN_A
=0V, V
IN_B
=3V,
ENB_A = ENB_B = High
I
DD
— 600 1000 µA
V
IN_A
=3V, V
IN_B
=3V,
ENB_A = ENB_B = Low
I
DD
— 300 450 µA
V
IN_A
=0V, V
IN_B
=0V,
ENB_A = ENB_B = Low
I
DD
— 500 800 µA
V
IN_A
=3V, V
IN_B
=0V,
ENB_A = ENB_B = Low
I
DD
— 500 800 µA
V
IN_A
=0V, V
IN_B
=3V,
ENB_A = ENB_B = Low
DC CHARACTERISTICS
(2)
(CONTINUED)
Electrical Specifications: Unless otherwise indicated, T
A
= +25°C, with 4.5V ≤ V
DD
≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Note 1: Switching times are ensured by design.
2: Tested during characterization, not production tested.
3: Package power dissipation is dependent on the copper pad area of the PCB.
DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE)
(2)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ V
DD
≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage V
IH
2.4 — — V
Logic ‘0’, Low Input Voltage V
IL
——0.8V
Input Current I
IN
-10 — +10 µA 0V ≤ V
IN
≤ V
DD
Output
High Output Voltage V
OH
V
DD
– 0.025 — — V DC Test
Low Output Voltage V
OL
— — 0.025 V DC Test
Output Resistance, High R
OH
—79Ω I
OUT
= 10 mA, V
DD
=18V
Output Resistance, Low R
OL
—79Ω I
OUT
= 10 mA, V
DD
=18V
Switching Time
(1)
Rise Time t
R
—2540nsFigure 4-1, Figure 4-2,
C
L
= 1800 pF
Fall Time t
F
—2540nsFigure 4-1, Figure 4-2,
C
L
= 1800 pF
Propagation Delay Time t
D1
—4565nsFigure 4-1, Figure 4-2
Propagation Delay Time t
D2
—4565nsFigure 4-1, Figure 4-2
Note 1: Switching times are ensured by design.
2: Tested during characterization, not production tested.