Datasheet

© 2011 Microchip Technology Inc. DS25005A-page 5
MCP14E9/10/11
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage V
EN_H
2.4 — — V V
DD
= 12V, Low-to-High Transition
Low-Level Input Voltage V
EN_L
——0.8VV
DD
= 12V, High-to-Low Transition
Hysteresis V
HYST
—0.4—V
Enable Pull-up Impedance R
ENBL
0.7 1.6 3.0 MΩ V
DD
=14V,
ENB_A = ENB_B = GND
Propagation Delay Time t
D3
—6080nsFigure 4-3
Propagation Delay Time t
D4
—7085nsFigure 4-3
Power Supply
Supply Voltage V
DD
4.5 — 18.0 V
Supply Current I
DD
— 1400 2200 µA V
IN_A
=3V, V
IN_B
=3V,
ENB_A = ENB_B = High
I
DD
—8001100µAV
IN_A
=0V, V
IN_B
=0V,
ENB_A = ENB_B = High
I
DD
— 1300 2000 µA V
IN_A
=3V, V
IN_B
=0V,
ENB_A = ENB_B = High
I
DD
— 1300 2000 µA V
IN_A
=0V, V
IN_B
=3V,
ENB_A = ENB_B = High
I
DD
— 800 1200 µA V
IN_A
=3V, V
IN_B
=3V,
ENB_A = ENB_B = Low
I
DD
— 500 600 µA V
IN_A
=0V, V
IN_B
=0V,
ENB_A = ENB_B = Low
I
DD
— 600 900 µA V
IN_A
=3V, V
IN_B
=0V,
ENB_A = ENB_B = Low
I
DD
— 600 900 µA V
IN_A
=0V, V
IN_B
=3V,
ENB_A = ENB_B = Low
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ V
DD
≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T
A
-40 — +125 °C
Maximum Junction Temperature T
J
——+150°C
Storage Temperature Range T
A
-65 — +150 °C
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN θ
JA
— 35.7 — °C/W Typical four-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP θ
JA
—89.3 —°C/W
Thermal Resistance, 8L-SOIC θ
JA
—149.5 — °C/W
DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE)
(2)
(CONTINUED)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ V
DD
≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Note 1: Switching times are ensured by design.
2: Tested during characterization, not production tested.