Datasheet

 2005-2018 Microchip Technology Inc. DS20001826E-page 3
MCP1700
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
............................................................................................+6.5V
All inputs and outputs w.r.t. ......... (V
SS
- 0.3V) to (V
IN
+0.3V)
Peak Output Current ....................................Internally Limited
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature................................... 150°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM;MM)  4kV;  400V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only, and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise specified, all limits are established for V
IN
=V
R
+1V, I
LOAD
= 100 µA,
C
OUT
=1µF (X7R), C
IN
=1µF(X7R), T
A
= +25°C.
Boldface type applies for junction temperatures, T
J
(Note 6) of -40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Input/Output Characteristics
Input Operating
Voltage
V
IN
2.3 — 6.0 V Note 1
Input Quiescent
Current
I
q
—1.64 µA I
L
=0mA, V
IN
=V
R
+1V
Maximum Output
Current
I
OUT_mA
250
200
—
—
—
—
mA For V
R
 2.5V
For V
R
 2.5V
Output Short
Circuit Current
I
OUT_SC
— 408 — mA V
IN
=V
R
+1V, V
OUT
=GND
Current (peak current) measured 10 ms
after short is applied.
Output Voltage
Regulation
V
OUT
V
R
-2.0%
V
R
-3.0%
V
R
±0.4% V
R
+2.0%
V
R
+3.0%
V Note 2
V
OUT
Temperature
Coefficient
TCV
OUT
— 50 — ppm/°C Note 3
Line Regulation V
OUT
/
(V
OUT
XV
IN
)
-1.0 ±0.75 +1.0 %/V (V
R
+1)V  V
IN
 6V
Load Regulation V
OUT
/V
OUT
-1.5 ±1.0 +1.5 %I
L
= 0.1 mA to 250 mA for V
R
 2.5V
I
L
= 0.1 mA to 200 mA for V
R
 2.5V
Note 4
Dropout Voltage
V
R
 2.5V
V
IN
-V
OUT
— 178 350 mV I
L
= 250 mA, (Note 1, Note 5)
Dropout Voltage
V
R
 2.5V
V
IN
-V
OUT
— 150 350 mV I
L
= 200 mA, (Note 1, Note 5)
Output Rise Time T
R
— 500 — µs 10% V
R
to 90% V
R
V
IN
= 0V to 6V,
R
L
=50 resistive
Note 1: The minimum V
IN
must meet two conditions: V
IN
 2.3V and V
IN
 V
R
+3.0%V
DROPOUT
.
2: V
R
is the nominal regulator output voltage. For example: V
R
= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 2.9V, 3.0V, 3.3V, 4.0V, 5.0V.
The input voltage V
IN
=V
R
+ 1.0V; I
OUT
= 100 µA.
3: TCV
OUT
=(V
OUT-HIGH
-V
OUT-LOW
) *10
6
/ (V
R
* Temperature), V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a V
R
+ 1V differential applied.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e. T
A
, T
J
, 
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.