Datasheet

© 2008 Microchip Technology Inc. DS22058C-page 5
MCP6V01/2/3
TABLE 1-3: DIGITAL ELECTRICAL SPECIFICATIONS
TABLE 1-4: TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/3,
V
OUT
=V
DD
/2, V
L
=V
DD
/2, R
L
= 20 kΩ to V
L
, C
L
= 60 pF, and CS = GND (refer to Figure 1-5 and Figure 1-6).
Parameters Sym Min Typ Max Units Conditions
CS Pull-Down Resistor (MCP6V03)
CS
Pull-Down Resistor R
PD
35—MΩ
CS
Low Specifications (MCP6V03)
CS
Logic Threshold, Low V
IL
V
SS
—0.3V
DD
V
CS Input Current, Low I
CSL
—5—pA
CS
= V
SS
CS High Specifications (MCP6V03)
CS
Logic Threshold, High V
IH
0.7V
DD
—V
DD
V
CS Input Current, High I
CSH
—V
DD
/R
PD
—pA
CS
= V
DD
CS Input High, GND Current per
amplifier
I
SS
—-0.7—µA
CS
= V
DD
, V
DD
= 1.8V
I
SS
—-2.3—µA
CS
= V
DD
, V
DD
= 5.5V
Amplifier Output Leakage, CS
High I
O_LEAK
—20—pA
CS
= V
DD
CS Dynamic Specifications (MCP6V03)
CS
Low to Amplifier Output On
Turn-on Time
t
ON
— 11 100 µs
CS
Low = V
SS
+0.3 V, G = +1 V/V,
V
OUT
= 0.9 V
DD
/2
CS
High to Amplifier Output High-Z t
OFF
—10—µs
CS
High = V
DD
– 0.3 V, G = +1 V/V,
V
OUT
= 0.1 V
DD
/2
Internal Hysteresis V
HYST
—0.25—V
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: V
DD
= +1.8V to +5.5V, V
SS
= GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T
A
-40 — +125 °C
Operating Temperature Range T
A
-40 — +125 °C (Note 1)
Storage Temperature Range T
A
-65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 8L-2x3 TDFN θ
JA
—41—°C/W
Thermal Resistance, 8L-4x4 DFN θ
JA
—44—°C/W(Note 2)
Thermal Resistance, 8L-SOIC θ
JA
— 150 — °C/W
Note 1: Operation must not cause T
J
to exceed Maximum Junction Temperature specification (150°C).
2: Measured on a standard JC51-7, four layer printed circuit board with ground plane and vias.