Datasheet

ManualsBrandsMicrochip ManualsDiscrete SemiconductorsMOSFET Single N-Channel 100V SOT-89

Supertex inc.

www.supertex.com

Doc.# DSFP-TN2510

A062113

TN2510

Features

► Low threshold (2.0V max.)

► High input impedance

► Low input capacitance (125pF max.)

► Fast switching speeds

► Low on-resistance

► Free from secondary breakdown

► Low input and output leakage

Applications

► Logic level interfaces - ideal for TTL and CMOS

► Solid state relays

► Battery operated systems

► Photo voltaic drives

► Analog switches

► General purpose line drivers

► Telecom switches

General Description

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input

impedance and positive temperature coefcient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

N-Channel Enhancement-Mode

Vertical DMOS FET

Absolute Maximum Ratings

Parameter Value

Drain-to-source voltage BV

DSS

Drain-to-gate voltage BV

DGS

Gate-to-source voltage ±20V

Operating and storage temperature -55

C to +150

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

Pin Conguration

TO-243AA (SOT-89)

Product Marking

TO-243AA (SOT-89)

TN5AW

W = Code for week sealed

= “Green” Packaging

GATE

SOURCE

DRAIN

Package may or may not include the following marks: Si or

Ordering Information

Part Number Package Option Packing

TN2510N8-G TO-243AA (SOT-89) 2000/Reel

Product Summary

DSS

/BV

DGS

DS(ON)

(max)

D(ON)

(min)

GS(th)

(max)

100V 1.5Ω 3.0A 2.0V

Typical Thermal Resistance

Package θ

TO-243AA (SOT-89) 133

C/W

Note:

Mounted on FR5 Board, 25mm x 25mm x 1.57mm

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

Summary of content (5 pages)

PAGE 1
Supertex inc. TN2510 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold (2.0V max.) High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.
PAGE 2
TN2510 Thermal Characteristics ID Package (continuous)† ID Power Dissipation (pulsed) @TA = 25OC 730mA 5.0A 1.6W‡ TO-243AA (SOT-89) IDR† IDRM 730mA 5.0A Notes: † ID (continuous) is limited by max rated Tj . ‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 100 - - V VGS = 0V, ID = 2.0mA VGS(th) Gate threshold voltage 0.6 - 2.
PAGE 3
TN2510 Typical Performance Curves Output Characteristics 10 8.0 8.0 VGS = 10V ID (amperes) ID (amperes) Saturation Characteristics 10 6.0 8V 4.0 6V 2.0 VGS = 10V 6.0 8V 4.0 6V 2.0 4V 4V 3V 0 0 10 20 30 40 3V 0 50 0 2 4 VDS (volts) 8 10 Power Dissipation vs. Ambient Temperature Transconductance vs. Drain Current 2.0 6 VDS (volts) 2.0 VDS = 25V TO-243AA TA = -55OC 1.2 PD (watts) GFS (siemens) 1.6 TA = 25OC 0.8 1.0 TA = 125OC 0.4 0 0 1.0 2.0 3.0 4.
PAGE 4
TN2510 Typical Performance Curves (cont.) 1.1 BVDSS Variation with Temperature On-Resistance vs. Drain Current 10 VGS = 5.0V RDS(ON) (Ω) BVDSS (normalized) 8 1.0 6 VGS = 10V 4 2 10 0 50 100 0 2 4 6 8 10 TJ (OC) ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature VGS = 25V 2.0 1.2 TA = -55OC RDS(ON) @5.0V, 0.75A VGS(th) (normalized) 8 ID (amperes) 0 150 6 25OC 4 125OC 1.1 1.6 1.0 1.2 V(th) @ 1.0mA 0.9 0.8 RDS(ON) (normalized) 0.
PAGE 5
TN2510 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 C E H L 1 2 E1 3 b b1 e A e1 Top View Symbol Dimensions (mm) Side View A b b1 C D D1 E E1 e MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00 NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e1 † 1.50 BSC 3.00 BSC H L 3.94 0.73† - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale.