Datasheet

USB251xB/xBi
DS00001692C-page 40  2010 - 2015 Microchip Technology Inc.
Note 6-2 The rise time for the 3.3 V supply can be extended to 100 ms max if RESET_N is actively driven
low, typically by another IC, until 1
s after all supplies are within operating range.
FIGURE 6-1: SUPPLY RISE TIME MODEL
TABLE 6-1: DC ELECTRICAL CHARACTERISTICS
Parameter Symbol MIN TYP MAX Units Comments
I, IS Type Input Buffer
Low Input Level V
ILI
0.8 V TTL Levels
High Input Level V
IHI
2.0 V
Input Leakage I
IL
-10 +10 AV
IN
= 0 to VDD33
Hysteresis (IS only) V
HYSI
250 350 mV
Input Buffer with Pull-Up (IPU)
Low Input Level V
ILI
0.8 V TTL Levels
High Input Level V
IHI
2.0 V
Low Input Leakage I
ILL
+35 +90 AV
IN
= 0
High Input Leakage I
IHL
-10 +10 AV
IN
= VDD33
Input Buffer with Pull-Down (IPD)
Low Input Level V
ILI
0.8 V TTL Levels
High Input Level V
IHI
2.0 V
Low Input Leakage I
ILL
+10 -10 AV
IN
= 0
High Input Leakage I
IHL
-35 -90 AV
IN
= VDD33
USB251xB/xBi
ICLK Input Buffer
Low Input Level V
ILCK
0.3 V
High Input Level V
IHCK
0.9 V
Input Leakage I
IL
-10 +10 AV
IN
= 0 to VDD33
t
10%
10%
90%
Voltage
t
RT33
t
90%
Time
100%
3.3 V
VSS
VDD33