IPM L-series Application Note Dec.
Mitsubishi IPM-series Application Note Index Index 1. IPM L-series Features 2. Product Line-up 3. Term Explanation 4. Numbering System 5. Structure 6. Correct and Safety Use of Power Module 7. Reliability 7-1. Introduction 7-2. Basic Concepts of Semiconductor Device Reliability 7-3. Mitsubishi’s Quality-Assurance Program 7-4. Reliability Testing 7-5. Failure Analysis 7-6. Derating and Reliability Projections 7-7. Conclusion 8. Installation of power Module 8-1. Installing Capacitor 8-2.
Mitsubishi IPM-series Application Note IPM L-series Feature, Product Line-up 1.IPM L-series Feature In recent years, motor control devices such as general-purpose inverters and AC servos used in industrial equipments are being required by ever-increased demands, not only for improved performance and reduced size, but also for ease of use and benefit to the environment. To meet these need, Mitsubishi Electric developed the "S-DASH series" IPMs previously.
Mitsubishi IPM-series Application Note Product Line-up Package IPM L-series Small-package 㪪㪺㫉㪼㫎㩷㫋㫐㫇㪼㩷㫇㪸㪺㫂㪸㪾㪼㩷 IPM L-series Medium-package 㩷 㩷 㩷 㩷 㩷 㩷 㩷 㩷 㩷 㪧㫀㫅㩷㫋㫐㫇㪼㩷㫇㪸㪺㫂㪸㪾㪼㩷 IPM L-series Large-package 㩷 Applications of IPM to AC Motor Controls(General purpose Inverter) عAC220V Line Motor Ratings (kW) Current Ratings(100%) (Arms) 3.7 17 5.5/7.5 23/33 11.0 46 15.0/18.5 61/75 22.0 30.0 37.0/45.0 55.0 90 115 145/180 215 عAC440V Line Motor Ratings (kW) Current Ratings(100%) (Arms) 5.
Mitsubishi IPM-series Application Note Term Explanation 3.
Mitsubishi IPM-series Application Note Numbering System 4.
Mitsubishi IPM-series Application Note Structure 5. Structure ex.) Small package Screw type 2.Control input terminal 1.Main electrode 11.Internal connection terminal 3.Resin 5.Case 9.Control PCB 6.Wire 1 2 Part Main electrode Control input terminal 3 4 5 6 7 8 9 10 11 Resin Gel Case Wire Chip Base plate Control PCB Insulated substrate Internal connection terminal 4.Gel 8.Base plate 7.
Mitsubishi IPM-series Application Note Correct and Safety Use of Power Module 6. Correct and Safety Use of Power Module Unsuitable operation (such as electrical, mechanical stress and so on) may lead to damage of power modules. Please pay attention to the following descriptions and use Mitsubishi Electric's IGBT modules according to the guidance.
Mitsubishi IPM-series Application Note Correct and Safety Use of Power Module Cautions Mounting When mounting a module on a heat sink, a device could get damage or degrade if a sudden torque ("one side tightening ") is applied at only one mounting terminal, since stress is applied on a ceramic plate and silicon chips inside the module. Shown in Fig.6.1 is the recommended torquing order for mounting screws.
Mitsubishi IPM-series Application Note Reliability 7.Reliability Wearout Failure Failure Rate Radom Failure Time Fig.7.1 Failure Rate Versus Time O-A-B-C Initial Failure (Factory) C-D Early Failure (Field) D-E Random Failure (Field) E-F Wearout (Field) (0-A-B-C-D Debugging Period) Failure Rate 7-1.
Mitsubishi IPM-series Application Note Reliability 7-2-2. Power Module Failure Reason After a piece of equipment has been assembled and adjusted, or has been placed in field service, failed devices that are returned to the factory are analyzed to determine the cause of failure. This procedure is intended to determine whether the problem lays with the device itself, or the manner in which it was used. This section will list potential reasons of failure.
Mitsubishi IPM-series Application Note Reliability 7-2-3. Thermal Fatigue of Power Module 7-2-3-1 Operating Temperature Pattern The operating temperature pattern of power module is displayed in Fig.7.3. It is important to consider two patterns that are independent each other in thermal fatigue life of power module. عOperation Mode 1 Power cycle life is called when change of case temperature is small, but frequent change of junction temperature occurs.
Mitsubishi IPM-series Application Note Reliability 7-2-3-2. Power Cycle Failure Mechanism Fig.7.4 shows the typical construction of power module. When junction temperature of power module is changed, stress strain between aluminum wire and silicon chip, and between silicon chip and insulation substrate occurs due to the difference of coefficient of linear expansion. If this stress is supplied repetitively, thermal fatigue for the junction becomes failure.
Mitsubishi IPM-series Application Note Reliability 7-3. Mitsubishi's Quality-Assurance Program One of the basic goals of Mitsubishi Electric is to offer our customers quality products. As a consequence, product quality, price, timely delivery, and service are equally important aspects deserving an equal amount of attention. Still, product quality must stand above all others from a standpoint of customer confidence.
Mitsubishi IPM-series Application Note Reliability Fig.7.7 Flow Chart of Quality Assurance Program 15 Dec.
Mitsubishi IPM-series Application Note Reliability 7-4. Reliability Testing 7-4-1 Reliability Testing Procedures High reliability standards are assured with Mitsubishi semiconductor devices through the rigorous quality-control inspections, which the devices are subjected to in the design and manufacturing stages, and through the quality-assurance inspections run on each production lot. Numerous reliability tests have been implemented in order to maintain this standard of reliability.
Mitsubishi IPM-series Application Note Reliability 7-5. Failure Analysis Failure analysis is one of the sources of information used in maintaining, and making improvements in standards of quality and reliability. Failure analysis procedures are performed on failed devices at all stages of their life cycle, ranging from the development state to failure while in use.
Mitsubishi IPM-series Application Note Installation of power Module 8. Installation of power Module 8-1 Installing Capacitor During switching, voltage is induced in power circuit stray inductance by the high di/dt of the main current. This voltage can appear on the IPM and cause damage.
Mitsubishi IPM-series Application Note Installation of power Module 8-3 Thermal Impedance Considerations & Chip Layout The junction to case thermal resistance Rth(j-c) and the case to heat-sink thermal resistance Rth(c-f) are given in datasheet. The case temperature has been measured at the just under the chip. The case temperature measurement point of various products is shown in Table 3. It is measured by uniform 100μm~200μm coating of thermal grease with thermal conductivity of 0.
Mitsubishi IPM-series Application Note Installation of power Module Chip layout (Small package) 600V type UP Type Name VP WP UN VN Br WN 㶎RLA/RLB IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi PM50RLA/RLB060 X 29.0 29.5 64.6 65.1 85.9 86.4 38.1 37.6 54.8 55.3 76.1 75.6 18.3 22.4 PM50CLA/CLB060 Y -7.3 1.6 -7.3 2.1 -7.3 2.1 5.3 -4.6 5.3 -4.6 5.3 -4.6 -7.4 7.0 PM75RLA/RLB060 X 28.7 28.7 65.2 65.2 85.3 85.3 38.0 38.0 55.
Mitsubishi IPM-series Application Note Installation of power Module Chip layout (Medium package) 600V type㩷 UP Type Name PM200RLA060 PM200CLA060 PM300RLA060 PM300CLA060 IGBT 23.7 56.7 23.0 56.3 X Y X Y VP FWDi 23.0 43.7 23.0 42.7 IGBT 57.2 56.7 57.5 56.3 WP FWDi 56.5 43.7 56.5 42.7 IGBT 87.7 56.7 87.5 56.3 UN FWDi 86.5 43.7 86.5 42.7 IGBT 37.7 28.7 37.0 29.1 VN FWDi 38.0 41.8 38.0 42.7 IGBT 70.2 28.7 70.5 29.1 WN FWDi 71.5 41.8 71.5 42.7 IGBT 100.7 28.7 100.5 29.1 FWDi 101.5 41.8 101.5 42.
Mitsubishi IPM-series Application Note Installation of power Module 8-4 Coating Method of Thermal Grease (Example) The coating method of thermal grease is introduced in this section. The thermal grease is called as grease in the following.
Mitsubishi IPM-series Application Note Using IPM 9. Using IPM 9-1 Applications of IPML-series to Motor drive (ex. 6in1 PM**CLA/CLB060, PM**CLA/CLB120) (ex. 7in1 PM**RLA/RLB060, PM**RLA/RLB120) Notes for stable and safe operation ; ٨ Design the PCB pattern to minimize wiring length between photo-coupler and IPM's input terminal, and also to minimize the stray capacity between the input and output wirings of photo -coupler.
Mitsubishi IPM-series Application Note Using IPM 9-2 Interface of control side of IPM IPM (Intelligent Power Modules) is easy to operate. The integrated drive and protection circuits require only an isolated power supply and a low level on/off control signal. A fault output is provided for monitoring the operation of the module internal protection circuits. (1) Circuit and circuit constant of the IPM interface circuit The parts of connecting IPM and controller (CPU) are required to use following parts.
Mitsubishi IPM-series Application Note Using IPM The inside of the control input terminal is connected to the comparator and is with high impedance. When IPM (IGBT) is turn-off , the output impedance of the photo-coupler becomes high. Total impedance of the circuit which connect the interface circuit is equal to a resistance of about 20KΩ. The most important consideration in interface circuit design is layout.
Mitsubishi IPM-series Application Note Using IPM (4) Fo terminal of IPM Fo is the output which shows the abnormal condition of IPM. The extraordinary modes are overheating(OT), load ( the arm ) short circuit(SC), and control supply under voltage(UV). Fo does not distinguish these kinds of failures. The fault output is open collector type with its maximum sink current internally limited.
Mitsubishi IPM-series Application Note Using IPM Low speed photo coupler Low speed photo coupler is connected Fo terminal of IPM. When choosing photo coupler, pay attention to the parameter of CTR. Choose the photo coupler that the value of CTR is equal to or more than 100 %. For example) TLP-521 (Toshiba) PS2502 (NEC) Please inquire the manufacturer that the photo-coupler has or has not problem when work under your environmental condition.
Mitsubishi IPM-series Application Note Using IPM (5) Notice of using photo coupler The photo coupler can isolate the primary side and secondary side. But, this is not correct at the high frequency. Because, photo coupler have a parasitic capacity between primary side and secondary side. When high dv/dt is impressed, the pulse electric current flows from the primary side to the secondary side via the parasitic capacity of photo coupler. This current sometimes turn on the photo coupler.
Mitsubishi IPM-series Application Note Using IPM (6) Connecter for control terminal of IPM We use the connector from “HIROSE ELECTRIC CO., LTD” in our test of IPM. The following connector is recommended. The pace of this connector is 2.00 mm. It is the special connector of IPM which secured an electrical clearance among the terminals( U-V,V-W,W-U of P-side and N) The terminal with gold plate is recommended from the viewpoint of contact reliability.
Mitsubishi IPM-series Application Note Using IPM 9-3 Control Power supply of IPM (1) The control power supply The voltage range including ripples should meet the specification. Control supply voltage VD(V) 0~4.0 Operation behavior It is almost the same as no power supply. External noise may cause IPM malfunction (turns ON). Supply under-voltage protection will not operate and no Fo signal will be asserted. 4.0~12.
Mitsubishi IPM-series Application Note Using IPM (2) The circuit current of control power supply of IPM The circuit current of control power supply of IPM is shown below. This current is average of DC and fc=20kHz. Condition : VD=15V,Tj=25{C, Unit : mA AC220V IPM L-series 䌎-side DC 20kHz Type.
Mitsubishi IPM-series Application Note Using IPM The circuit current of the IPM control power supply at other frequency The circuit current of control power supply of IPM increases with the carrier frequency. The carrier frequency dependence of the circuit current of the IPM control power supply can be approximated as a straight line like the following figure. The gate of IGBT used in IPM has an input-capacitance(Cies=CGE+CCG).
Mitsubishi IPM-series Application Note Using IPM 9-4 Fault Signal of IPM IPM (Intelligent Power Modules) have sophisticated built-in protection circuits that prevent the power devices from being damaged should the system malfunction or be over stressed. Control supply under-voltage(UV), over temperature(OT), and short-circuit(SC) protection are all provided by the IPM's internal gate control circuits.
Mitsubishi IPM-series Application Note Using IPM Short Circuit (SC) If a load short circuit occurs or the system controller malfunctions causing a shoot through, the IPMs built in short circuit protection will prevent the IGBTs from being damaged. When the current, through the IGBT exceeds the short circuit trip level (SC), an immediate controlled shutdown is initiated and a fault output is generated. Note) 1.
Mitsubishi IPM-series Application Note Using IPM The operating-sequence of the SC protection a1 : The normal operation=IGBT ON a2 : Short current detection (SCt) a3 : IGBT gate is blocked softly. a4 : IGBT turn off gradually. a5 : Fo timer start (tFo=1.8ms typ.) a6 : Input signal “H”=OFF a7 : Input signal “L”=ON a8 : IGBT maintains off.
Mitsubishi IPM-series Application Note Using IPM 9-5 Other notice of using IPM (1) The treatment of the terminal not to use Type CLA,CLB have B terminal. These terminal aren’t connected to the circuit. The pattern can be connected with this terminal. However, pay attention to the wiring. When connecting a pattern with these terminals, the noise might invades IPM via the terminals. Please just leave these terminals open.
Mitsubishi IPM-series Application Note Power Loss and Junction Temperature 10. Power Loss and Junction Temperature Junction temperature can be used as an indication of IGBT module situation. This section will discuss how to calculate junction temperature and give an example based on waveform shown in Fig.10.1. Here, only power loss of IGBT part is given. The power loss of Diode can be obtained by using the same method as IGBT part.
Mitsubishi IPM-series Application Note Power Loss and Junction Temperature (3) Average Power Loss The average power loss per pulse is P1 = E1 tw 1 (W) Fig.10.4 is approximation of Fig.10.1 by using rectangle wave. Fig.10.4 Average power loss during period of tw2 is (See Fig.10.5) Pav = E1 ×N tw 2 (W) N㧦pulse numbers in tw2 period Fig.10.5 Total average power loss is (See Fig.10.6) PAV = Pav × tw 2 T2 (W) Fig.10.6 b.
Mitsubishi IPM-series Application Note Power Loss and Junction Temperature (1) tw1<<1ms In case of short on interval or low duty as in Fig.10.5, Junction temperatures rise to the highest value at the turn-off moment of tw2 while the case temperature is stationary. (See Fig.10.7) Fig.10.7 Fig.10.8 Temperature difference between junction and case can be calculated by using the following formula.
Mitsubishi IPM-series Application Note Power Loss and Junction Temperature (3) tw2>1s In a similar way to (2), temperature change of heatsink should be taken into consideration as well. It is necessary to know the transient heat impedance of the heatsink. (Fig.10.9) Fig.10.9 Similarly, the temperature difference between junction and ambient can be calculated by using the following formula.
Mitsubishi IPM-series Application Note Average Power Loss Simplified Calculation 11. Average Power Loss Simplified Calculation (1) VVVF Inverter عApplicability Range It is applicable to total power loss calculation for selection of IGBTs used in VVVF inverters. It is not applicable in the thermal design of the device (limit design).
Mitsubishi IPM-series Application Note Average Power Loss Simplified Calculation Because reverse recovery of free-wheeling diodes occurs in half cycle of the output current, the dynamic power loss of FWDi is عInverter Loss Calculation Notes Divide one cycle of output current into many equal intervals, then calculate actual "PWM duty", "Output current", and "VCE(sat), VEC, and Psw responding to the current" in each interval. The power loss during one cycle is the sum of each interval.
Mitsubishi IPM-series Application Note Notice for safe Designs and when Using This Specification 12. Notice for safe Designs and when Using This Specification 㩷 Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but these are always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
