Electronics America Single-Chip Microcontrollers User's Manual

CHAPTER 22 ELECTRICAL SPECIFICATIONS ( µ PD789488, 78F9488, 789489, 78F9489)
User’s Manual U15331EJ4V1UD 361
Flash Memory Writing and Erasing Characteristics (TA = 10 to 40°C, VDD = 1.8 to 5.5 V)
(
µ PD78F9488, 78F9489 only)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Write/erase operating frequency fX 2.7 V ≤ VDD ≤ 5.5 V 1.0 5 MHz
1.8 V ≤ VDD ≤ 5.5 V 1.0 1.25 MHz
Write current (VDD pin)
Note
IDDW When VPP supply voltage = VPP1
(at 5.0 MHz operation)
7 mA
Write current (VPP pin)
Note
IPPW When VPP supply voltage = VPP1 13 mA
Erase current (VDD pin)
Note
IDDE When VPP supply voltage = VPP1
(at 5.0 MHz operation)
7 mA
Erase current (VPP pin)
Note
IPPE When VPP supply voltage = VPP1 100 mA
Unit erase time ter 0.5 1 1 s
Total erase time tera 20 s
Number of overwrites Erase and write is considered as 1
cycle
20 Times
VPP0 Normal operation 0 0.2VDD V VPP supply voltage
V
PP1 Flash memory programming 9.7 10.0 10.3 V
Note Excludes current flowing through ports (including on-chip pull-up resistors)