Data Sheet

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Nexperia B.V. 2017. All rights reserved
2N7002BKS All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 2 — 23 September 2010 2 of 16
Nexperia
2N7002BKS
60 V, 300 mA dual N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1S1source1
2 G1 gate 1
3D2drain2
4S2source2
5 G2 gate 2
6D1drain1
132
4
56
017aaa05
5
6
5
4
1
2
3
Table 3. Ordering information
Type number Package
Name Description Version
2N7002BKS SC-88 plastic surface-mounted package; 6 leads SOT363
Table 4. Marking codes
Type number Marking code
[1]
2N7002BKS ZT*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
DS
drain-source voltage T
amb
=25°C-60V
V
GS
gate-source voltage T
amb
=25°C-±20 V
I
D
drain current V
GS
=10V
[1]
T
amb
=25°C-300mA
T
amb
=100°C-215mA