Data Sheet

©
Nexperia B.V. 2017. All rights reserved
2N7002BKS All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 2 — 23 September 2010 6 of 16
Nexperia
2N7002BKS
60 V, 300 mA dual N-channel Trench MOSFET
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.01.
Table 7. Characteristics
T
j
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
=10μA; V
GS
=0V 60--V
V
GS(th)
gate-source threshold
voltage
I
D
=250μA; V
DS
=V
GS
1.1 1.6 2.1 V
I
DSS
drain leakage current V
DS
=60V; V
GS
=0V
T
j
=25°C --1μA
T
j
= 150 °C --10μA
I
GSS
gate leakage current V
GS
= ±20 V; V
DS
=0V--10μA
R
DSon
drain-source on-state
resistance
[1]
V
GS
=5V; I
D
=50mA - 1.3 2 Ω
V
GS
=10V; I
D
=500mA - 1 1.6 Ω
g
fs
forward
transconductance
V
DS
=10V; I
D
= 200 mA
[1]
- 550 - mS
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=300mA;
V
DS
=30V;
V
GS
=4.5V
-0.50.6nC
Q
GS
gate-source charge - 0.2 - nC
Q
GD
gate-drain charge - 0.1 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=10V;
f=1MHz
- 3350pF
C
oss
output capacitance - 7 - pF
C
rss
reverse transfer
capacitance
-4-pF
t
d(on)
turn-on delay time V
DD
=50V;
R
L
=250Ω;
V
GS
=10V;
R
G
=6Ω
- 5 10 ns
t
r
rise time -6-ns
t
d(off)
turn-off delay time - 12 24 ns
t
f
fall time - 7 - ns
Source-drain diode
V
SD
source-drain voltage I
S
=115mA; V
GS
= 0 V 0.47 0.75 1.1 V