Data Sheet

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Nexperia B.V. 2017. All rights reserved
2N7002BKS All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 2 — 23 September 2010 8 of 16
Nexperia
2N7002BKS
60 V, 300 mA dual N-channel Trench MOSFET
V
DS
>I
D
× R
DSon
(1) T
amb
=25°C
(2) T
amb
= 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
I
D
= 0.25 mA; V
DS
=V
GS
(1) maximum values
(2) typical values
(3) minimum values
f=1MHz; V
GS
=0V
(1) C
iss
(2) C
oss
(3) C
rss
Fig 12. Gate-source threshold voltage as a function of
ambient temperature
Fig 13. Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
V
GS
(V)
0.0 5.04.02.0 3.01.0
017aaa043
0.4
0.6
0.2
0.8
1.0
I
D
(A)
0.0
(1) (2)
T
amb
(°C)
−60 180120060
017aaa044
1.2
0.6
1.8
2.4
a
0.0
a
R
DSon
R
DSon 25°C()
-----------------------------
=
T
amb
(°C)
−60 180120060
017aaa045
1.0
2.0
3.0
V
GS(th)
(V)
0.0
(2)
(1)
(3)
017aaa046
V
DS
(V)
10
−1
10
2
101
10
10
2
C
(pF)
1
(2)
(1)
(3)