Data Sheet

2N7002 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 8 September 2011 2 of 13
NXP Semiconductors
2N7002
60 V, 300 mA N-channel Trench MOSFET
3. Ordering information
4. Marking
[1] % = placeholder for manufacturing site code
5. Limiting values
Table 3. Ordering information
Type number Package
Name Description Version
2N7002 TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
2N7002 12%
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage 25 °C ≤ T
j
≤ 150 °C - 60 V
V
DGR
drain-gate voltage 25 °C ≤ T
j
≤ 150 °C; R
GS
=20kΩ -60V
V
GS
gate-source voltage -30 30 V
V
GSM
peak gate-source voltage pulsed; t
p
≤ 50 µs; δ = 0.25 -40 40 V
I
D
drain current V
GS
=10V; T
sp
=25°C; see Figure 1;
see Figure 3
- 300 mA
V
GS
=10V; T
sp
= 100 °C; see Figure 1 - 190 mA
I
DM
peak drain current pulsed; t
p
≤ 10 µs; T
sp
=25°C; see
Figure 3
-1.2A
P
tot
total power dissipation T
sp
=25°C; see Figure 2 -0.83W
T
j
junction temperature -65 150 °C
T
stg
storage temperature -65 150 °C
Source-drain diode
I
S
source current T
sp
= 25 °C - 300 mA
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
sp
=25°C - 1.2 A