Data Sheet

©
Nexperia B.V. 2017. All rights reserved
BUK7620-100A All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 2 — 2 February 2011 4 of 13
Nexperia
BUK7620-100A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
03nd56
1
10
10
2
10
3
1 10 10
2
10
3
V
DS
(V)
I
D
(A)
D.C.
100 ms
10 ms
R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10 μs
100 μs
t
p
t
p
T
P
t
T
δ =
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from
junction to mounting base
see Figure 4 --0.75K/W
R
th(j-a)
thermal resistance from
junction to ambient
mounted on a printed-circuit board;
minimum footprint
-50-K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
03nd57
Single Shot
0.2
0.1
0.05
0.02
10
−3
10
−2
10
−1
1
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
Z
th(j-mb)
(K/W)
δ = 0.5
t
p
t
p
T
P
t
T
δ =