Data Sheet

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Nexperia B.V. 2017. All rights reserved
BUK7620-100A All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 2 — 2 February 2011 7 of 13
Nexperia
BUK7620-100A
N-channel TrenchMOS standard level FET
Fig 9. Transfer characteristics: drain current as a
function of gate source voltage; typical values
Fig 10. Gate-source voltage as a function of turn-on
gate charge; typical values
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
03nd51
0
20
40
60
80
100
02468
V
GS
(V)
I
D
(A)
T
j
= 175 °C
T
j
= 25 °C
03nd49
0
2
4
6
8
10
0 20 40 60 80 100
Q
G
(nC)
V
GS
(V)
V
DD
= 80 VV
DD
= 14 V
T
j
(°C)
−60 180120060
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03nd54
0
10
20
30
40
50
0 50 100 150 200 250
I
D
(A)
R
DSon
(mΩ)
6
6.5
7
810
V
GS
(V) = 5.5