Data Sheet

ManualsBrandsNEXPERIA ManualsFETsMOSFET 1 107 W

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 Low conduction losses due to low

on-state resistance

 Q101 compliant

 Suitable for logic level gate drive

sources

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V loads

 Automotive and general purpose

power switching

 Motors, lamps and solenoids

1.4 Quick reference data

BUK9214-30A

N-channel TrenchMOS logic level FET

Rev. 3 — 14 June 2012 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 175°C --30V

drain current V

=5V; T

=25°C; see Figure 1;

see Figure 3

--63A

tot

total power dissipation T

=25°C; see Figure 2 - - 107 W

Static characteristics

DSon

drain-source on-state

resistance

= 4.5 V; I

=25A; T

= 25 °C - - 15.5 mΩ

=10V; I

=25A; T

=25°C - 9 12 mΩ

=5V; I

=25A; T

=25°C;

see Figure 11

; see Figure 12

-1114mΩ

Dynamic characteristics

gate-drain charge V

=5V; I

=25A; V

=24V;

=25°C; see Figure 13

- 12.2 - nC

Avalanche ruggedness

DS(AL)S

non-repetitive drain-source

avalanche energy

=63A; V

sup

≤ 30 V; R

=50Ω;

=5V; T

j(init)

= 25 °C; unclamped

- - 230 mJ

Summary of content (14 pages)

PAGE 1
BUK9214-30A N-channel TrenchMOS logic level FET Rev. 3 — 14 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.
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BUK9214-30A Nexperia N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain Simplified outline Graphic symbol mb 3 S source mb D mounting base; connected to drain D G mbb076 S 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3.
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BUK9214-30A Nexperia N-channel TrenchMOS logic level FET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BUK9214-30A Nexperia N-channel TrenchMOS logic level FET 03nh78 103 ID (A) tp = 10 μs RDSon = VDS / ID 102 100 μs 1 ms DC 10 10 ms 100 ms 1 1 Fig 3. 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9214-30A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 June 2012 © Nexperia B.V. 2017.
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BUK9214-30A Nexperia N-channel TrenchMOS logic level FET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - - 1.4 K/W Rth(j-a) thermal resistance from junction to ambient - 71.4 - K/W 03nh80 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 0.05 10−1 0.02 10−2 δ= P tp T Single Shot t tp 10−3 10−6 T 10−5 10−4 10−3 10−2 10−1 1 tp (s) Fig 4.
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BUK9214-30A Nexperia N-channel TrenchMOS logic level FET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 30 - - V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 27 - - V ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10 1 1.5 2 V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 - - 2.
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BUK9214-30A Nexperia N-channel TrenchMOS logic level FET 03nf71 300 ID (A) 250 9 10 03nf70 18 RDSon (mΩ) 7 8 16 VGS (V) = 6 200 14 150 5 100 4 50 3 12 0 10 2.2 0 2 4 6 8 8 10 3 5 7 9 11 13 15 VGS (V) VDS (V) Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6.
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BUK9214-30A Nexperia N-channel TrenchMOS logic level FET 03nf69 80 03aa33 2.5 VGS(th) (V) ID (A) 2 max 60 1.5 typ 1 min 40 20 0.5 Tj = 175 °C 0 0 1 Tj = 25 °C 2 3 4 0 -60 5 0 60 120 VGS (V) Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values RDSon (mΩ) 25 3 3.4 3.8 4 03aa27 2 VGS (V) = 5 180 Fig 10. Gate-source threshold voltage as a function of junction temperature 03nf72 30 Tj (°C) a 1.5 20 1 15 10 0.
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BUK9214-30A Nexperia N-channel TrenchMOS logic level FET 03nf67 5 03nf73 3500 C (pF) 3000 VGS (V) 4 VDD = 14 V 2500 VDD = 24 V Ciss 3 2000 Coss 1500 2 1000 Crss 1 500 0 0 10 20 30 0 40 10−2 10−1 1 102 10 VDS (V) QG (nC) Fig 13. Gate-source voltage as a function of turn-on gate charge; typical values Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 03nf66 100 IS (A) 80 60 40 20 Tj = 175 °C 0 0 0.
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BUK9214-30A Nexperia N-channel TrenchMOS logic level FET 8. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 y E A A A1 b2 E1 mounting base D2 D1 HD 2 L L2 1 L1 3 b1 b w M c A e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D1 D2 min E E1 min e e1 HD L L1 min L2 w y max mm 2.38 2.22 0.93 0.46 0.89 0.71 1.1 0.9 5.46 5.00 0.56 0.20 6.22 5.98 4.0 6.73 6.47 4.45 2.
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BUK9214-30A Nexperia N-channel TrenchMOS logic level FET 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK9214-30A v.3 20120614 Product data sheet - BUK9214-30A v.2 - BUK9214-30A v.1 Modifications: BUK9214-30A v.2 BUK9214-30A Product data sheet • Various changes to content. 20100615 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 June 2012 © Nexperia B.V.
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BUK9214-30A Nexperia N-channel TrenchMOS logic level FET 10. Legal information 10.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BUK9214-30A Nexperia N-channel TrenchMOS logic level FET Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement.
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Nexperia BUK9214-30A N-channel TrenchMOS logic level FET 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . .