Data Sheet

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Nexperia B.V. 2017. All rights reserved
BUK9214-30A All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 3 — 14 June 2012 3 of 14
Nexperia
BUK9214-30A
N-channel TrenchMOS logic level FET
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 30 V
V
DGR
drain-gate voltage R
GS
=20kΩ -30V
V
GS
gate-source voltage -15 15 V
I
D
drain current T
mb
=25°C; V
GS
=5V; see Figure 1; see Figure 3 -63A
T
mb
= 100 °C; V
GS
=5V; see Figure 1 -45A
I
DM
peak drain current T
mb
= 25 °C; pulsed; t
p
≤ 10 µs; see Figure 3 - 253 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - 107 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C - 63 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 253 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
=63A; V
sup
≤ 30 V; R
GS
=50Ω; V
GS
=5V;
T
j(init)
= 25 °C; unclamped
- 230 mJ
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03nh79
0
20
40
60
80
25 50 75 100 125 150 175 200
T
mb
(°C)
I
D
(A)
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0