Data Sheet

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Nexperia B.V. 2017. All rights reserved
BUK9214-30A All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 3 — 14 June 2012 7 of 14
Nexperia
BUK9214-30A
N-channel TrenchMOS logic level FET
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
T
j
= 25 °C; V
DS
= 5 V
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
03nf71
0
50
100
150
200
250
300
0246810
V
DS
(V)
I
D
(A)
2.2
3
4
5
10
9
8
7
V
GS
(V) = 6
03nf70
8
10
12
14
16
18
3579111315
V
GS
(V)
R
DSon
(mΩ)
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
maxtypmin
03nf68
0
10
20
30
40
50
0 10203040506070
I
D
(A)
g
fs
(S)