Data Sheet

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Nexperia B.V. 2017. All rights reserved
BUK9214-30A All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 3 — 14 June 2012 8 of 14
Nexperia
BUK9214-30A
N-channel TrenchMOS logic level FET
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
03nf69
0
20
40
60
80
012345
V
GS
(V)
I
D
(A)
T
j
= 175 °CT
j
= 25 °C
03aa33
0
0.5
1
1.5
2
2.5
-60 0 60 120 180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
03nf72
0
5
10
15
20
25
30
0 50 100 150 200
I
D
(A)
R
DSon
(mΩ)
3
3.4
3.8
4
V
GS
(V) = 5
03aa27
0
0.5
1
1.5
2
−60 0 60 120 180
T
j
(
°
C)
a