PMBT2907 40V, 600 mA, PNP switching transistor 6 March 2015 Product data sheet 1. General description PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222 60V variant: PMBT2907A 2. Features and benefits • • Single general-purpose switching transistor AEC-Q101 qualified 3. Applications • Switching and linear amplification 4. Quick reference data Table 1.
PMBT2907 Nexperia 40V, 600 mA, PNP switching transistor 6. Ordering information Table 3. Ordering information Type number PMBT2907 Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code [1] PMBT2907 %2B [1] PMBT2907 Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 6 March 2015 © Nexperia B.V. 2017.
PMBT2907 Nexperia 40V, 600 mA, PNP switching transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PMBT2907 Nexperia 40V, 600 mA, PNP switching transistor [1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. aaa-014479 103 duty cycle = 1 Zth (K/W) 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 Mounted on FR4 PCB; standard footprint. Fig. 2.
PMBT2907 Nexperia 40V, 600 mA, PNP switching transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -50 V; IE = 0 A; Tamb = 25 °C - - -20 nA VCB = -50 V; IE = 0 A; Tj = 125 °C - - -20 µA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -50 nA hFE DC current gain VCE = -10 V; IC = -0.
PMBT2907 Nexperia 40V, 600 mA, PNP switching transistor aaa-014480 400 hFE aaa-014481 -1 IB = -20 mA IC (A) (1) -18 300 -14 -16 -0.8 -12 -8 -0.6 -4 -0.4 -2 (3) 100 -0.2 -1 -102 -10 IC (mA) 0 -103 VCE = -10 V 0 -2 -4 -6 -8 -10 VCE (V) Tamb = 25 °C (1) Tamb = 150 °C Fig. 4. (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 3.
PMBT2907 Nexperia 40V, 600 mA, PNP switching transistor aaa-014484 -1 aaa-014699 -1 VCEsat (V) VCEsat (V) -10-1 -10-1 (1) (2) (1) (2) (3) -10-2 -10-1 Fig. 7. -1 (3) -10 -102 IC (mA) -10-2 -10-1 -103 -1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 150 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Collector-emitter saturation voltage as a function of collector current; typical values PMBT2907 Product data sheet Fig. 8.
PMBT2907 Nexperia 40V, 600 mA, PNP switching transistor 11. Test information - IB input pulse (idealized waveform) 90 % - I Bon (100 %) 10 % - I Boff output pulse (idealized waveform) - IC 90 % - I C (100 %) 10 % t td ts tr t on Fig. 9. tf t off 006aaa266 BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 VI oscilloscope DUT R1 mgd624 Fig. 10. Test circuit for switching times 11.
PMBT2907 Nexperia 40V, 600 mA, PNP switching transistor 12. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 bp c D E 0.48 0.15 3.0 1.4 0.38 0.09 2.8 1.2 e e1 1.9 0.95 HE Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.
PMBT2907 Nexperia 40V, 600 mA, PNP switching transistor 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 12. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 13.
PMBT2907 Nexperia 40V, 600 mA, PNP switching transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMBT2907 v.5 20150306 Product data sheet - PMBT2907_ PMBT2907A v.
PMBT2907 Nexperia 40V, 600 mA, PNP switching transistor In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.
PMBT2907 Nexperia 40V, 600 mA, PNP switching transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations.
PMBT2907 Nexperia 40V, 600 mA, PNP switching transistor 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 1 6 Ordering information ............................................
