Datasheet

1999 Apr 23 2
Philips Semiconductors Product specification
PNP switching transistor 2N3906
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• High-speed switching in industrial applications.
DESCRIPTION
PNP switching transistor in a TO-92; SOT54 plastic
package. NPN complement: 2N3904.
PINNING
PIN DESCRIPTION
1 collector
2 base
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM280
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter −−40 V
V
CEO
collector-emitter voltage open base −−40 V
V
EBO
emitter-base voltage open collector −−6V
I
C
collector current (DC) −−200 mA
I
CM
peak collector current −−300 mA
I
BM
peak base current −−100 mA
P
tot
total power dissipation T
amb
≤ 25 °C − 500 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C