User's Manual
Table Of Contents
- 1 Introduction
- 2 Module Power
- 3 Physical Interfaces
- Module Mounting to Host Board (Reference)
- Connectors
- Connectors
- I/O Connector Pin Assignments
- Circuit Protection
- Antenna
- Control Connector Signal Functions
- Module Power (Pins 85, 87, 89, 91, 93, 95, 97, 99)
- Power Control (Pin 35) - (PWR_CTL)
- Level Translation Reference Power (Pin 77)
- USB (Pins 1, 3, 5, 7, 9)
- General Purpose Input/Output Interface
- RTC Sleep
- Serial Interfaces & Handshake (Pins 11, 13, 15, 17, 19, 21, 23, 25)
- Multi-Channel Serial Interface (MCSI) – (Pins 12, 14, 16, 18)
- VBackup Input (Pin83)
- Using VBackup
- Analog-to-Digital Input (Pin 74)
- Handset Microphone Input (Pins 65, 67)
- Handset Microphone Bias Output (Pin 63)
- Handset Speaker Output (Pins 71, 73)
- Headset Microphone Input (Pin 55)
- Headset Microphone Bias Output (Pin 53)
- Headset Speaker Output Left & Right (Pins 57, 59)
- Headset Output Common Mode (Pin 61)
- Headset Detect (Pin 47)
- Subscriber Identity Module (SIM) Carrier (Pins 76, 78, 80, 82, 84)
- 4 Hardware Design
- General Design Guidelines for Using Novatel Wireless M2M GSM Modules
- Enabling the Transmission Modes for the GSM/GPRS Services
- Voice Communication
- Circuit-Switched Data
- SMS: Short Message Services
- Provisioning The SIM
- GSM Services Supported by the Novatel Wireless M2M Enabler IIIG Module
- GPRS Services Supported by the Novatel Wireless M2M Enabler IIIG Module
- Selecting the GSM Modes of Operation
- 5 Setup and Initialization
- 6 Integration and Testing
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USIM Parameter/Conditions Min Typ Max Units
VDD SIM VDD voltage 1.65 1.8 1.95 V
2.7 2.85 2.95 V
VIH High level input voltage 1.15 V
VIL Low level input voltage 0.61 V
VOH High level output voltage, IO = 4 mA Vdd-0.45 V
VOL Low level output voltage, IO = 1 mA 0.4 V
II Input leakage current ±1 μA
Iout Output current 4 mA
PU PU resistance 32 kΩ
PD PD resistance 30 kΩ
Iz Leakage current ± 30 μA
Card Detect Debouncing time (SIM-card insertion) 0.5 mS
Debouncing time (SIM-card extraction) 15 mS
Pull-up resistor (resistor + resistive switch) 475 kΩ
Remote SIM Component Information
Any compatible SIM carrier can be used in conjunction with the Enabler IIIG module. For
example:
Lumberg P/N 8840_A_21.
or Suyin P/N: 254016MA006G103ZL
Remote SIM Example
ESD protection is required for all SIM sockets. A Transient Voltage Suppressor (TVS) diode
with low capacitance, typically less than 10pF, should be used. ESD protection is required for
PTCRB and GCF approval and should be located as close to the connector as possible. Signal
lines from the connector to the modem should be routed 'through' the pad of the diode,
rather than a 'T' branch. Decoupling capacitance on SIM_VDD will be required, and should be
placed as close to the SIM connector as possible. The value of the required capacitor will vary
by design, and will typically be below 0.1uF. The SIM electrical tests will be conducted during
the PTCRB and GCF approval process. Experimentation of the capacitance value may be
required to pass these tests. Factors affecting the capacitance of the SIM_VDD line include:
trace length, capacitance of the TVS diode, and physical placement of the capacitor.