Datasheet

Electrical Characteristics (Cont’d): (T
A
= +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
FE
I
C
= 0.1mA, V
CE
= 10V 35
I
C
= 1mA, V
CE
= 10V 50
I
C
= 10mA, V
CE
= 10V 75
I
C
= 10mA, V
CE
= 10V, T
A
= 55°C 35
I
C
= 150mA, V
CE
= 10V 100 300
I
C
= 150mA, V
CE
= 1.0V 50
I
C
= 500mA, V
CE
= 10V 40
CollectorEmitter Saturation Voltage V
CE(sat)
I
C
= 150mA, I
B
= 15mA 0.3 V
I
C
= 500mA, I
B
= 50mA 1.0 V
BaseEmitter Saturation Voltage V
BE(sat)
I
C
= 150mA, I
B
= 15mA 0.6 1.2 V
I
C
= 500mA, I
B
= 50mA 2.0 V
Small–Signal Characteristics
Current GainBandwidth Product f
T
I
C
= 20mA, V
CE
= 20V,
f = 100MHz, Note 2
300 MHz
Output Capacitance C
obo
V
CB
= 10V, I
E
= 0, f = 100kHz 8 pF
Input Capacitance C
ibo
V
EB
= 0.5V, I
C
= 0, f = 100kHz 25 pF
Input Impedance h
ie
I
C
= 1mA, V
CE
= 10V, f = 1kHz 2.0 8.0
k
I
C
= 10mA, V
CE
= 10V, f = 1kHz 0.25 1.25 k
Voltage Feedback Ratio h
re
I
C
= 1mA, V
CE
= 10V, f = 1kHz 8 x 10
4
I
C
= 10mA, V
CE
= 10V, f = 1kHz 4 x 10
4
SmallSignal Current Gain h
fe
I
C
= 1mA, V
CE
= 10V, f = 1kHz 50 300
I
C
= 10mA, V
CE
= 10V, f = 1kHz 75 375
Output Admittance h
oe
I
C
= 1mA, V
CE
= 10V, f = 1kHz 5.0 35
µmhos
I
C
= 10mA, V
CE
= 10V, f = 1kHz 25 200
µmhos
CollectorBase Time Constant rbC
c
I
E
= 20mA, V
CB
= 20V, f = 31.8MHz 150 ps
Noise Figure NF I
C
= 100µA, V
CE
= 10V,
R
S
= 1k, f = 1kHz
4 dB
Real Part of CommonEmitter
High Frequency Input Impedance
Re(h
ie
) I
C
= 20mA, V
CE
= 20V, f = 300MHz 60
Switching Characteristics
Delay Time t
q
V
CC
= 30V, V
BE(off)
= 0.5V,
10 ns
Rise Time t
r
I
C
= 150mA, I
B1
= 15mA
25 ns
Storage Time t
s
V
CC
= 30V, I
C
= 150mA,
225 ns
Fall Time t
f
I
B1
= I
B2
= 15mA
60 ns
Active Region Time Constant T
A
I
C
= 150mA, V
CE
= 30V 2.5 ns
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Note 2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.