Datasheet

NTE199
Silicon NPN Transistor
Low Noise, High Gain Amplifier
Description:
The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise
preamplifier and small signal industrial amplifier applications. This device features low collector satu-
ration voltage, tight beta control, and excellent low noise characteristics.
Absolute Maximum Ratings: (T
A
= +25°C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Steady State Collector Current (Note 1), I
C
100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25°C), P
T
360mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25°C 3.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +55°C), P
T
260mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25°C 3.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16” from case, 10sec max), T
L
+260°C. . . . . . . . . . . . . . . . .
Note 1. Determined from power limitations due to saturation voltages at this current
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Collector Cutoff Current I
CBO
V
CB
= 50V – – 30 nA
V
CB
= 50V, T
A
= +100°C – – 10 µA
Collector Cutoff Current I
CES
V
CB
= 50V – – 30 nA
Emitter Cutoff Current I
EBO
V
EB
= 5V – – 50 nA