Datasheet

NTE2633 (NPN) & NTE2634 (PNP)
Silicon Complementary Transistors
High Frequency Video Driver
Description:
The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126
type package designed for use in the buffer stage of the driver for high–resolution color graphics moni-
tors.
Features:
D High Breakdown Voltage
D Low Output Capacitance
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
115V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
95V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage (R
BE
= 100Ω), V
CER
110V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Collector Current, I
C
300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
S
≤ +115°C, Note 1), P
tot
3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Soldering Point (T
S
≤ +115°C, Note 1), R
thJS
20K/W. . . . . . . . .
Note 1. T
S
is the temperature at the soldering point of the collector lead.
Electrical Characteristics:
(T
J
= +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V
(BR)CBO
I
C
= 0.1mA 115 – – V
Collector–Emitter Breakdown Voltage V
(BR)CEO
I
C
= 10mA 95 – – V
V
(BR)CER
I
C
= 10mA, R
BE
= 100Ω 110 – – V
Emitter–Base Breakdown Voltage V
(BR)EBO
I
E
= 0.1mA 3 – – V
Collector Cutoff Current I
CES
I
B
= 0, V
CE
= 50V – – 100 µA
I
CBO
I
E
= 0, V
CB
= 50V – – 20 µA
DC Current Gain h
FE
I
C
= 50mA, V
CE
= 10V, T
A
= +25°C 20 35 –
Transition Frequency f
T
I
C
= 50mA, V
CE
= 10V, f = 100MHz,
T
A
= +25°C
0.8 1.2 – GHz
Collector–Base Capacitance C
cb
I
C
= 0, V
CB
= 10V, f = 1MHz, T
A
= +25°C – 2.0 – pF