Datasheet

NTE2970
MOSFET
N-Channel, Enhancement Mode
High Speed Switch
Features:
D Avalanche Rugged Technology
D Rugged Gate Oxide Technology
D Lower Input Capacitance
D Improved Gate Charge
D Extended Safe Operating Area
D Lower Leakage Current
D Lower R
DS(ON)
Applications:
D SMPS
D DC-DC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer
Absolute Maximum Ratings:
Drain-Source Voltage, V
DSS
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, Continuous, I
D
T
C
= +25°C 22A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100°C 13.4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, Pulsed (Note 1), I
DM
88A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage, V
GS
±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Energy (Note 2), E
AS
2151mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current (Note 1), I
AR
22A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Avalanche Energy (Note 1), E
AR
27.8mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Diode Recovery dv/dt (Note 3), dv/dt 3.5V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25°C), P
D
278W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Linear Derating Factor 2.22W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
-55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
-55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/8” from case, 5 sec.), T
L
+300°C. . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction-to-Case, R
thJC
0.45°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Case-to-Sink, R
thCS
0.24°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction-to-Ambient, R
thJA
40°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Repetitive Rating: Pulse Width limited by Maximum Junction Temperature.
Note 2. L = 8mH, I
AS
= 22A, V
DD
= 50V, R
G
= 27Ω, Starting T
J
= +25°C.
Note 3. I
SD
≤ 22A, di/dt ≤ 300A/μs, V
DD
≤ V
(BR)DSS
, Starting T
J
= +25°C.