Datasheet

Electrical Characteristics: (T
C
= +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0V, I
D
= 250μA 500 - - V
Breakdown Voltage Temperature
Coefficient
ΔBV/ΔT
J
I
D
= 250μA
- 0.69 - V/°C
Gate Threshold Voltage V
GS(th)
V
DS
= 5V, I
D
= 250μA 2.0 - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ±30V - - ±100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500V - - 10 μA
V
DS
= 400V, T
C
= +125°C
- - 100 μA
Static Drain-Source ON Resistance R
DS(on)
V
GS
= 10V, I
D
= 11A, Note 4 - - 0.25 Ω
Forward Transconductance g
fs
V
DS
= 50V, I
D
= 11A, Note 4 - 17.31 - mhos
Input Capacitance C
iss
V
GS
= 0V, V
DS
= 25V, f = 1MHz
- 3940 5120 pF
Output Capacitance C
oss
- 465 535 pF
Reverse Transfer Capacitance C
rss
- 215 250 pF
Turn-On Delay Time t
d(on)
V
DD
= 200V
,
I
D
= 22A, V
GS
= 10V,
R
G
= 5.3Ω, Note 4, Note 5
- 27 65 ns
Rise Time t
r
- 30 70 ns
Turn-Off Delay Time t
d(off)
- 150 310 ns
Fall Time t
f
- 43 95 ns
Total Gate Charge Q
g
V
DS
= 400V, V
GS
= 10V, I
D
= 22A,
Note 4, Note 5
- 182 236 nC
Gate-Source Charge Q
gs
- 26 - nC
Gate-Drain (Miller) Charge Q
gd
- 79.6 - nC
Source-Drain Diode Ratings and Characteristics
Continuous Source Current I
S
Integral Reverse PN-Diode in the
MOSFET
- - 22 A
Pulsed Source Current (Note 1)
I
SM
- - 88 A
Diode Forward Voltage
V
SD
T
J
= +25°C, I
S
= 22A, V
GS
= 0V
- - 1.4 V
Reverse Recovery Time
t
rr
T
J
= +25°C, I
F
= 22A,
di
F
/dt = 100A/μs, Note 4
- 528 - ns
Reverse Recovery Charge
Q
rr
- 8.35 - μC
Note 1. Repetitive Rating: Pulse Width limited by Maximum Junction Temperature.
Note 4. Pulse Test: Pulse Width = 250μs, Duty Cycle ≤ 2%.
Note 5. Essentially Independent of Operating Temperature.