Datasheet

NTE312
N–Channel Silicon Junction
Field Effect Transistor
Description:
The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The
NTE312 comes in a TO–92 package.
Features:
D High Power Gain: 10dB Min at 400MHz
D High Transconductance: 4000 µmho Min at 400MHz
D Low C
rss
: 1pF Max
D High (Y
fs
) / C
iss
Ratio (High–Frequency Figure–of–Merit)
D Drain and Gate Leads Separated for High Maximum Stable Gain
D Cross–Modulation Minimized by Square–Law Transfer Characteristic
D For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment
Absolute Maximum Ratings
: (T
A
= +25°C unless otherwise specified)
Drain–Gate Voltage, V
DG
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, V
GS
–30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current, I
G
50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25°C ), P
D
360mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25°C 2.88mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25°C), P
D
500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25°C 4.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature, During Soldering (1/16 Inch from Case for 10sec), T
L
+260°C. . . . . . . . . . . . . . .