Datasheet

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NTE4071B & NTE4071BT

Integrated Circuit

CMOS, Quad 2−Input OR Gate

Description:

The NTE4071B (14−Lead DIP) and NTE4071BT (SOIC−14) are quad 2−input OR gate devices

constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic

structure. These complementary MOS logic gates find primary use where low power dissipation

and/or high noise immunity is desired.

Features:

D Supply Voltage Range: 3Vdc to 18Vdc

D All Outputs Buffered

D Capable of Driving Two Low−Power TTL Loads or One Low−Power Schottky TTL Load Over

the Rated Temperature Range

D Double Diode Protection on All Inputs

Absolute Maximum Ratings:

(Voltages referenced to V

, Note 1)

DC Supply Voltage, V

−0.5 to +18.0V..................................................

Input Voltage (DC or Transient), V

−0.5 to V

to +0.5V....................................

Output Voltage (DC or Transient), V

out

−0.5 to V

to +0.5V.................................

Input Current (DC or Transient, Per Pin), I

±10mA.........................................

Output Current (DC or Transient, Per Pin), I

out

±10mA......................................

Power Dissipation (Per Package), P

500mW.............................................

Temperature Derating (from +65° to +125°C) −7.0mW/°C.............................

Storage Temperature, T

stg

−65° to +150°C.................................................

Lead Temperature (During Soldering, 8sec max), T

+260°C.................................

Note 1. Maximum Ratings are those values beyond which damage to the device may occur.

Summary of content (4 pages)

PAGE 1
NTE4071B & NTE4071BT Integrated Circuit CMOS, Quad 2−Input OR Gate Description: The NTE4071B (14−Lead DIP) and NTE4071BT (SOIC−14) are quad 2−input OR gate devices constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired.
PAGE 2
Electrical Characteristics: (Voltages referenced to VSS, Note 2) −555C +255C +1255C VDD Vdc 5.0 Min Max Min Typ Max Min Max − 0.05 − 0 0.05 − 0.05 Unit Vdc 10 − 0.05 − 0 0.05 − 0.05 Vdc 15 − 0.05 − 0 0.05 − 0.05 Vdc 5.0 4.95 − 4.95 5.0 − 4.95 − Vdc 10 9.95 − 9.95 10 − 9.95 − Vdc 15 14.95 − 14.95 15 − 14.95 − Vdc 5.0 − 1.5 − 2.25 1.5 − 1.5 Vdc (VO = 9.0 or 1.0Vdc) 10 − 3.0 − 4.50 3.0 − 3.0 Vdc (VO = 13.5 or 1.5Vdc) 15 − 4.
PAGE 3
Switching Characteristics: (CL = 50pF, TA = +25°C, Note 2) VDD Vdc Min Typ Max Unit 5.0 − 100 200 ns tTLH = (0.60ns/pf) CL + 20ns 10 − 50 100 ns tTLH = (0.40ns/pf) CL + 20ns 15 − 40 80 ns 5.0 − 100 200 ns tTHL = (0.60ns/pf) CL + 20ns 10 − 50 100 ns tTHL = (0.40ns/pf) CL + 20ns 15 − 40 80 ns 5.0 − 160 300 ns tPLH, tPHL = (0.36ns/pf) CL + 47ns 10 − 65 130 ns tPLH, tPHL = (0.26ns/pf) CL + 37ns 15 − 50 100 ns Parameter Symbol Output Rise Time tTLH = (1.
PAGE 4
NTE4071B 14 8 1 7 .300 (7.62) .600 (15.24) .200 (5.08) Max .100 (2.45) .099 (2.5) Min .785 (19.95) Max NTE4071BT .340 (8.64) .050 (1.27) 14 8 1 7 .198 (5.03) .154 (3.91) .236 (5.99) 016 (.406) 061 (1.53) .006 (.