Datasheet

NTE457
Silicon N–Channel JFET Transistor
General Purpose Amp, Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain–Gate Voltage, V
DG
25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Gate–Source Voltage, V
GSR
–25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current, I
G
10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25°C), P
D
310mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 2.82mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate–Source Breakdown Voltage V
(BR)GS
S
I
G
= –10µA, V
DS
= 0 –25 – – V
Gate Reverse Current I
GSS
V
GS
= 15V, V
DS
= 0 – – –1 mA
V
GS
= 15V, V
DS
= 0, T
A
= +100°C – – –200 mA
Gate–Source Cutoff Voltage V
GS(off)
V
DS
= 15V, I
D
= 10nA –0.5 – –6.0 V
Gate–Source Voltage V
GS
V
DS
= 15V, I
D
= 100µA – – –2.5 V
ON Characteristics
Zero–Gate Voltage Drain Current I
DSS
V
DS
= 15V, V
GS
= 0, Note 1 1 3 5 mA
Small–Signal Characteristics
Forward Transfer Admittance
Common Source
|y
fs
| V
DS
= 15V, V
GS
= 0, f = 1kHz,
Note 1
1000 – 5000 µmhos
Output Admittance Common Source |y
os
| V
DS
= 15V, V
GS
= 0, f = 1kHz,
Note 1
– 10 50 µmhos
Input Capacitance C
iss
V
DS
= 15V, V
GS
= 0, f = 1kHz – 4.5 7.0 pF
Reverse Transfer Capacitance C
rss
V
DS
= 15V, V
GS
= 0, f = 1kHz – 1.5 3.0 pF
Note 1. Pulse Test: Pulse Width ≤ 630ms, Duty Cycle ≤ 10%.