Datasheet

NTE458
N–Channel Silicon JFET
General Purpose, Low Noise, Audio Frequency Amplifier
Features:
D Very Low Noise
D Low Gate Current
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Gate–Drain Voltage, V
GDO
–50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, V
GSO
–50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain–Source Voltage (V
DS
= –2V), V
DSX
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, I
D
20mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current, I
G
10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation, P
T
250mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Gate Reverse Current I
GSS
V
GS
= –20V, V
DS
= 0 – – –1 nA
Zero–Gate Voltage Drain Current I
DSS
V
DS
= 10V, V
GS
= 0 0.5 3.0 12 mA
Gate–Source Voltage V
GS(off)
V
DS
= 10V, I
D
= 10µA –0.13 –0.5 –1.5 V
Forward Transconductance g
fs
V
DS
= 10V, I
D
= 0.5mA, f = 1kHz 4.0 5.2 – mhos
V
DS
= 10V, V
GS
= 0, f = 1MHz 4.0 12 – mhos
Input Capacitance C
iss
V
DS
= 10V, V
GS
= 0, f = 1MHz – 13 – pF
Reverse Transfer Capacitance C
rss
V
DS
= 10V, V
GS
= 0, f = 1MHz – 2.6 – pF
Noise Frequency NF V
DS
= 10V, V
GS
= 0, R
G
= 1kΩ,
f = 10Hz
– 5.0 10 dB
V
DS
= 10V, V
GS
= 0, R
G
= 1kΩ,
f = 100Hz
– 1.0 3.0 dB
V
DS
= 10V, V
GS
= 0, R
G
= 1kΩ,
f = 1kHz
– 0.6 1.5 dB
Noise Voltage NV I
D
= 0.5mA, R
G
= 1kΩ,
f = 10Hz to 1kHz (at V
G
= –3dB)
– 15 20 mV