Datasheet

NTE48
Silicon NPN Transistor
Darlington, General Purpose Amplifier,
High Current
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CES
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
1000mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25°C), P
D
1.0W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 8.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25°C), P
D
2.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 20mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
50°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
125°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown
Voltage
V
(BR)CES
I
C
= 1mA, I
B
= 0, Note 1 50 – – V
Collector–Base Breakdown Voltage V
(BR)CBO
I
C
= 1.0µA, I
E
= 0 600 – – V
Emitter–Base Breakdown Voltage V
(BR)EBO
I
E
= 10µA, I
C
= 0 12 – – V
Collector Cutoff Voltage I
CBO
V
CB
= 40V, I
E
= 0 – – 100 nA
Emitter Cutoff Current I
EBO
V
BE
= 10V, I
C
= 0 – – 100 nA