Datasheet

NTE85
Silicon NPN Transistor
General Purpose Amplifier
Applications:
D Medium Power Amplifiers
D Class B Audio Outputs
D Hi–Fi Drivers
Absolute Maximum Ratings: (T
A
= +25°C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25°C), P
D
625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 5.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
83.3°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
200°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. These ratings are limiting values above which the serviceability of any semiconductor may
be impaired.
Note 2. These ratings are based on a maximum junction temperature of 150°C.
Electrical Characteristics: (T
A
= +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Breakdown
Voltage
V
(BR)CEO
I
C
= 10mA, I
B
= 0, Note 3 30 – – V
Collector–Base Breakdown Voltage V
(BR)CBO
I
C
= 100µA, I
E
= 0 50 – – V
Emitter–Base Breakdown Voltage V
(BR)EBO
I
E
= 100µA, I
C
= 0 5.0 – – V
Collector Cutoff Voltage I
CBO
V
CB
= 20V, I
E
= 0 – – 100 nA
Emitter Cutoff Current I
EBO
V
BE
= 3V, I
C
= 0 – – 100 nA
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%