Datasheet

Electrical Characteristics: (T
C
= +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Note 2)
CollectorEmitter Sustaining Voltage V
CEO(sus)
I
C
= 100mA, I
B
= 0, V
clamp
= 500V 500 V
V
CEX(sus)
I
C
= 2A, V
clamp
= 500V, T
C
= +100°C 500 V
I
C
= 5A, V
clamp
= 500V, T
C
= +100°C 375 V
Collector Cutoff Current I
CEV
V
CEV
= 700V, V
BE(off)
= 1.5V 0.25 mA
V
CEV
= 700V, V
BE(off)
= 1.5V, T
C
= +150°C 5.0 mA
I
CER
V
CE
= 700V, R
BE
= 50, T
C
= +100°C 5.0 mA
Emitter Cutoff Current I
EBO
V
EB
= 2V, I
C
= 0 175 mA
ON Characteristics (Note 3)
DC Current Gain h
FE
V
CE
= 5V, I
C
= 5A 40 400
V
CE
= 5V, I
C
= 10A 30 300
CollectorEmitter Saturation Voltage V
CE(sat)
I
C
= 10A, I
B
= 500mA 2.0 V
I
C
= 10A, I
B
= 500mA, T
C
= +100°C 2.5 V
I
C
= 20A, I
B
= 2A 3.5 V
BaseEmitter Saturation Voltage V
BE(sat)
I
C
= 10A, I
B
= 500mA 2.5 V
I
C
= 10A, I
B
= 500mA, T
C
= +100°C 2.5 V
Diode Forward Voltage V
F
I
F
= 5A, Note 3 3 5 V
Dynamic Characteristics
SmallSignal Current Gain h
fe
V
CE
= 10V, I
C
= 1A, f
test
= 1MHz 8
Output Capacitance C
ob
V
CB
= 50V, I
E
= 0, f
test
= 100kHz 100 325 pF
Switching Characteristics (Resistive Load)
Delay Time t
d
V
CC
= 250V, I
C
= 10A, I
B1
= 500mA,
µ
0.12 0.25 µs
Rise Time t
r
V
BE(off)
= 5V, t
p
= 50µs, Duty Cycle 2%
0.5 1.5 µs
Storage Time t
s
0.8 2.0 µs
Fall Time t
f
0.2 0.6 µs
Switching Characteristics (Inductive Load, Clamped)
Storage Time t
sv
I
C
= 10A Peak, V
clamp
= 250V,
°
1.5 3.5 µs
Crossover Time t
c
I
B1
= 500mA, V
BE(off)
= 5V, T
C
= +100°C
0.36 1.6 µs
Storage Time t
sv
I
C
= 10A Peak, V
clamp
= 250V,
°
0.8 µs
Crossover Time t
c
I
B1
= 500mA, V
BE(off)
= 5V, T
C
= +25°C
0.18 µs
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle 2%.
Note 3. The internal CollectorEmitter diode can eliminate the need for an external diode to clamp
inductive loads. Tests have shown that the Forward Recovery Voltage (V
F
) of this diode is
comparable to that of typical fast recovery rectifiers.